| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kelaidis, Nikolaos
National Centre of Scientific Research "Demokritos"
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2021Defect processes in halogen doped SnO2citations
- 2020Electronic properties of the Sn1−xPbxO alloy and band alignment of the SnO/PbO system: a DFT studycitations
- 2017Defect processes of Ti3AC2 MAX phases: Insights from atomistic modelling
- 2016Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructurescitations
- 2016Experimental investigation of metallic thin film modification of nickel substrates for chemical vapor deposition growth of single layer graphene at low temperaturecitations
- 2015Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxycitations
Places of action
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article
Experimental investigation of metallic thin film modification of nickel substrates for chemical vapor deposition growth of single layer graphene at low temperature
Abstract
<p>Lowering the growth temperature of single layer graphene by chemical vapor deposition (CVD) is important for its real-life application and mass production. Doing this without compromising quality requires advances in catalytic substrates. It is shown in this work that deposition of Zn and Bi metals modify the surface of nickel suppressing the uncontrollable growth of multiple layers of graphene. As a result, single layer graphene is obtained by CVD at 600 °C with minimum amount of defects, showing substantial improvement over bare Ni. In contrast, Cu, and Mo suppress graphene growth. We also show that graphene grown with our method has a defect density that is strongly dependent on the roughness of the original nickel foil. Good quality or highly defective holey single layer graphene can be grown at will by selecting a smooth or rough foil substrate respectively.</p>