| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Miglio, Leo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 20242H-Si/Ge for Group-IV Photonics:on the Origin of Extended Defects in Core-Shell Nanowirescitations
- 20242H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowirescitations
- 2021Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulationscitations
- 2021Unveiling Planar Defects in Hexagonal Group IV Materials
- 2021Unveiling Planar Defects in Hexagonal Group IV Materialscitations
- 2020In-plane selective area InSb–Al nanowire quantum networkscitations
- 2020In-plane selective area InSb–Al nanowire quantum networkscitations
- 2020Self-assembly of nanovoids in Si microcrystals epitaxially grown on deeply patterned substratescitations
- 2020Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentialscitations
- 2019X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) waferscitations
- 2019Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulationscitations
- 2018Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowirescitations
- 2017Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended filmcitations
- 2016Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substratescitations
- 2015Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Sicitations
- 2013Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowirescitations
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article
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film
Abstract
We simulate the morphological evolution of Ge microcrystals, grown out-of-equilibrium on deeply patterned Si substrates, as resulting from surface diffusion driven by the tendency toward the minimization of the surface energy. In particular, we report three-dimensional phase-field simulations accounting for the realistic surface energy anisotropy of Ge/Si crystals. In Salvalaglio et al. (2015) [10] it has been shown both by experiments and simulations that annealing of closely spaced crystals leads to a coalescence process with the formation of a suspended film. However, this was explained only by considering an isotropic surface energy. Here, we extend such a study by showing first the morphological changes of faceted isolated crystals. Then, the evolution of dense arrays is considered, describing their coalescence along with the evolution of facets. Combined with the previous results without anisotropy in the surface energy, this work allows us to confirm and assess the key features of the coalescence process. (C) 2016 Elsevier B.V. All rights reserved.