| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sporken, Robert
University of Namur
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2022Role of SnO2Nanoparticles for a Self-Forming Barrier Layer on a Mild Steel Surface in Hydrochloric Acid Medium Containing Piper betle Leaf Extractcitations
- 2022Study of surface oxidation and recovery of clean MoTe 2 filmscitations
- 2022Study of surface oxidation and recovery of clean MoTe2 filmscitations
- 2022Role of SnO 2 Nanoparticles for a Self-Forming Barrier Layer on a Mild Steel Surface in Hydrochloric Acid Medium Containing Piper betle Leaf Extractcitations
- 2020Preparation of single phase 2H-MoTe2 films by molecular beam epitaxycitations
- 2018Stack of Graphene/Copper Foils/Graphene by Low-Pressure Chemical Vapor Deposition as a Thermal Interface Materialcitations
- 2018Stack of Graphene/Copper Foils/Graphene by Low-Pressure Chemical Vapor Deposition as a Thermal Interface Materialcitations
- 2016Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphirecitations
- 2013Dielectric and diffusion barrier multilayer for Cu(In,Ga)Se solar cells integration on stainless steel sheetcitations
- 2013Adhesion, resistivity and structural, optical properties of molybdenum on steel sheet coated with barrier layer done by sol-gel for CIGS solar cellscitations
- 2012Molecular depth profiling of model biological films using low energy monoatomic ionscitations
- 2011Novel high thermal barrier layers for flexible CIGS solar cells on stainless steel substratescitations
- 2011Physical chemistry of the Mn/ZnO (0001̄) interface probed by hard X-ray photoelectron spectroscopycitations
- 2009Quantum Size Effect and very localized random laser in ZnO@mesoporous silica nanocomposite following a two-photon absorption processcitations
- 2009Demixing processes in AgPd superlatticescitations
- 2008Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy
- 2007Nanosized ZnO confined inside a Faujasite X zeolite matrixcitations
- 2007Nanosized ZnO confined inside a Faujasite X zeolite matrix:Characterization and optical propertiescitations
- 2007New phenomenon in the channels of mesoporous silicate CMI-1: quantum size effect and two-photon absorption of ZnO nanoparticlescitations
- 2007Co interaction on ZnO(000–1) investigated by scanning tunneling microscopycitations
- 2004Structural and electronic properties of Ag-Pd superlatticescitations
- 2002Growth of Fe/Ge(001) heterostructures by molecular beam epitaxycitations
- 2002Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy:Interface structure, electronic and magnetic propertiescitations
Places of action
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article
Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire
Abstract
We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 1012 cm−2) together with quite low carrier mobility (∼1350 cm2/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.