People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
García Núñez, Carlos
University of Glasgow
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Giant piezoelectric effect induced by porosity in inclined ZnO thin filmscitations
- 2024Optical and structural properties of silicon nitride thin films deposited by plasma enhanced chemical vapor deposition for high reflectance optical mirrors
- 2024Giant Piezoelectric Effect Induced by Porosity in Inclined ZnO Thin Filmscitations
- 2021Glancing angle deposition of nanostructured ZnO films for ultrasonicscitations
- 2019Graphene–graphite polyurethane composite based high‐energy density flexible supercapacitorscitations
- 2018Electronic skin with energy autonomy and distributed neural data processing
- 2018A novel growth method to improve the quality of GaAs nanowires grown by Ga-assisted chemical beam epitaxycitations
- 2017Metal-assisted chemical etched Si nanowires for high-performance large area flexible electronics
- 2016Fabrication and characterization of multiband solar cells based on highly mismatched alloys
- 2015Contribution to the Development of Electronic Devices Based on Zn3N2 Thin Films, and ZnO and GaAs Nanowires
- 2013p-type CuO nanowire photodetectors
- 2013Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered filmscitations
- 2013WO3 nanoparticle-functionalized nanowires for NOx sensing
- 2011Effect of the deposition temperature on the properties of Zn3N2 layers grown by rf magnetron sputtering
Places of action
Organizations | Location | People |
---|
article
Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered films
Abstract
This work analyzes the morphological, compositional and electrical modification of zinc nitride (Zn3N2) films through arc discharges produced by biasing a metal tip at a micrometric distance of the surface. Polycrystalline nitride layers are prepared by radio-frequency magnetron sputtering from a pure Zn target on glass substrates using N2 as working gas. Film properties after arc discharges are investigated by using scanning electron microscopy (SEM), ion beam analysis (IBA) techniques and four-probe resistivity measurements. Electrical discharge lithography performed at low bias voltages reveals as an effective mechanism to reduce resistivity by electrical breakdown of the thin oxide layer formed on top of the nitride. At higher voltages, electrical discharges along the scan increase nitride resistivity due to the severe modification of the structural properties. Additionally, compositional analysis reveals that nitrogen leaves the structure being replaced by ambient oxygen. This characteristic behavior leads to the formation of facetted submicron ZnO crystals whose size depends on the original Zn3N2 grain size and the probe voltage used. The excess of zinc forms self-assembled microstructures along the scan edge.