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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Tortet, Laurence
Aix-Marseille University
in Cooperation with on an Cooperation-Score of 37%
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Publications (4/4 displayed)
- 2021A New Lithium‐Rich Zeolitic 10‐MR Zincolithosilicate MZS‐1 Hydrothermally Synthesized under High Pressure and Characterized by 3D Electron Diffractioncitations
- 2014Elaboration of controlled size Li1.5Al0.5Ge1.5(PO4)3 crystallitescitations
- 2013Pulsed laser deposition of (Co, Fe)-doped ZnSnSb and MnGeSb thin films on siliconcitations
- 2012The Stone Age Revisited: Building a Monolithic Inorganic Lithium-Ion Batterycitations
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article
Pulsed laser deposition of (Co, Fe)-doped ZnSnSb and MnGeSb thin films on silicon
Abstract
Films of the material systems ZnSnSb and MnGeSb doped with Fe and Co respectively have been grown by pulsed laser deposition on silicon. Room temperature Hall effect measurements show that all Fe-doped PLD films are n-type whereas MnGeSb:Co ones are p-type. Carrier concentrations vary with film thickness, resulting in ∼1017–1018cm−3 for ZnSnSb:Fe and ∼1020–1021cm−3 for MnGeSb:Co films. Carrier mobilities are of the order 102 cm2/Vs in the MnGeSb:Co films and between 102 and 103 cm2/V s in ZnSnSb:Fe. Curie points above room temperature have been found for samples of both material systems.