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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Acton, Orb
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2013Effects of self-assembled monolayer structural order, surface homogeneity and surface energy on pentacene morphology and thin film transistor device performancecitations
- 2012Bottom-contact small-molecule n-type organic field effect transistors achieved via simultaneous modification of electrode and dielectric surfacescitations
- 2012Solid-state densification of spun-cast self-assembled monolayers for use in ultra-thin hybrid dielectricscitations
- 2011Simultaneous modification of bottom-contact electrode and dielectric surfaces for organic thin-film transistors through single-component spin-cast monolayerscitations
- 2010Effect of the phenyl ring orientation in the polystyrene buffer layer on the performance of pentacene thin-film transistorscitations
- 2009Study on the formation of self-assembled monolayers on sol-gel processed hafnium oxide as dielectric layerscitations
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article
Solid-state densification of spun-cast self-assembled monolayers for use in ultra-thin hybrid dielectrics
Abstract
Ultra-thin self-assembled monolayer (SAM)-oxide hybrid dielectrics have gained significant interest for their application in low-voltage organic thin film transistors (OTFTs). A [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) SAM on ultrathin AlO <sub>x</sub> (2.5 nm) has been developed to significantly enhance the dielectric performance of inorganic oxides through reduction of leakage current while maintaining similar capacitance to the underlying oxide structure. Rapid processing of this SAM in ambient conditions is achieved by spin coating, however, as-cast monolayer density is not sufficient for dielectric applications. Thermal annealing of a bulk spun-cast PhO-19-PA molecular film is explored as a mechanism for SAM densification. SAM density, or surface coverage, and order are examined as a function of annealing temperature. These SAM characteristics are probed through atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step. To demonstrate low-voltage devices based on this hybrid dielectric (with leakage current density of 7.7 × 10 <sup>-8</sup> A cm <sup>-2</sup> and capacitance density of 0.62 μF cm <sup>-2</sup> at 3 V), pentacene thin-film transistors (OTFTs) are fabricated and yield sub 2 V operation and charge carrier mobilites of up to 1.1 cm <sup>2</sup> V <sup>-1</sup> s <sup>-1</sup>. © 2012 Elsevier B.V. All rights reserved.