| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Teodoro, Orlando
Universidade Nova de Lisboa
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2023Amorphous carbon thin filmscitations
- 2023The Role of Hydrogen Incorporation into Amorphous Carbon Films in the Change of the Secondary Electron Yieldcitations
- 2020Free-standing N-Graphene as conductive matrix for Ni(OH)2 based supercapacitive electrodescitations
- 2019Nanocomposite thin films based on Au-Ag nanoparticles embedded in a CuO matrix for localized surface plasmon resonance sensingcitations
- 2018Development of Au/CuO nanoplasmonic thin films for sensing applicationscitations
- 2016Surface modifications on as-grown boron doped CVD diamond films induced by the B2O3-ethanol-Ar systemcitations
- 2014Ion-plasma treatment of reed switch contactscitations
- 2013Amorphous Carbon Coatings: Temperature Effect on Secondary Electron Yield (SEY)
- 2013Study of SEY degradation of amorphous carbon coatings
- 2013Increase of secondary electron yield of amorphous carbon coatings under high vacuum conditionscitations
- 2012An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium depositioncitations
- 2012TOF-SIMS study of cystine and cholesterol stonescitations
- 2009Characterisation of DLC Films Deposited Using Titanium Isopropoxide (TIPOT) at Different Flow Ratescitations
- 2006Characterisation of metal/mould interface on investment casting of γ-TiAlcitations
- 2005Evaluation of y2O3 as front layer of ceramic crucibles for vaccum induction melting of TiAl based alloys
- 2002Anomalous growth of Ba on Ag(111)citations
Places of action
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article
An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
Abstract
<p>A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga <sup>+</sup> bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P <sup>-</sup> emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.</p>