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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Sathyamoorthy, R.
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Publications (8/8 displayed)
- 2011Dielectric and relaxation properties of thermally evaporated nanostructured bismuth sulfide thin filmscitations
- 2009High-energy heavy-ion induced physical and surface-chemical modifications in polycrystalline cadmium sulfide thin filmscitations
- 2008Influence of porous morphology on optical dispersion properties of template free mesoporous titanium dioxide (TiO2) filmscitations
- 2007Effect of 80 MeV oxygen ion beam irradiation on the properties of CdTe thin filmscitations
- 2007Swift heavy ion beam irradiation induced modifications in structural, morphological and optical properties of CdS thin filmscitations
- 2006Structural properties of CdTe thin films on different substrates
- 2006Structural and photoluminescence properties of swift heavy ion irradiated CdS thin filmscitations
- 2003Structural, Optical and Electrical Properties of Zinc Phthalocyanine (ZnPc) thin films
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article
Dielectric and relaxation properties of thermally evaporated nanostructured bismuth sulfide thin films
Abstract
<p>Nanostructured bismuth sulfide thin films were prepared onto glass substrates with particle size of 21 nm by thermal evaporation using readily prepared bismuth sulfide nanocrystallite powder. The X-ray diffraction pattern revealed that bismuth sulfide thin films exhibit orthorhombic structure. The existence of quantum confinement effect was confirmed from the observed band gap energy of 1.86 eV. AC and DC electrical conductivity of Al/BiSnc/Al structures was investigated in the frequency range 0.5-100 kHz at different temperatures (303-463 K) under vacuum. The AC conductivity (σ<sub>ac</sub>) is found to be proportional to angular frequency (ω<sup>s</sup>). The obtained experimental result of the AC conductivity showed that the correlated barrier hopping model is the appropriate mechanism for the electron transport in the nanostructured bismuth sulfide thin films. DC conduction mechanism in these films was studied and possible conduction mechanism in the bismuth sulfide thin films was discussed.</p>