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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Czajka, R.
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Publications (5/5 displayed)
- 2016XPS valence band studies of nanocrystalline Zr[sbnd]Pd alloy thin filmscitations
- 2015Chemical etching of stainless steel 301 for improving performance of electrochemical capacitors in aqueous electrolytecitations
- 2015Ba termination of Ge(001) studied with STM
- 2015Initial growth of Ba on Ge(001): An STM and DFT study
- 2008STM study of titanium silicide nanostructure growth on Si(1 1 1)-(sqrt(19) × sqrt(19)) substratecitations
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article
STM study of titanium silicide nanostructure growth on Si(1 1 1)-(sqrt(19) × sqrt(19)) substrate
Abstract
<p>We have performed an STM/STS study of titanium silicide nanostructures grown on Si(1 1 1)-(sqrt(19) × sqrt(19)) substrate by Ti evaporation and post-deposition annealing. The (sqrt(19) × sqrt(19)) reconstruction was induced by Ni doping. The reaction between the deposited material and the substrate at 220 K was radically different from that observed in the case of the standard Si(1 1 1)-(7 × 7) substrate, as evidenced by the different evaporation time necessary to obtain a comparable coverage of the surface. The annealing was accomplished by direct heating of a crystal sample (up to 520 K, 670 K and 970 K). Measurements showed that coalescence of Ti nanoislands began between 520 K and 670 K. Annealing above 900 K led to alloying of Ti, Ni and Si. As a consequence, Si(1 1 1)-(7 × 7) reconstruction occurred at the cost of Si(1 1 1)-(sqrt(19) × sqrt(19)). © 2008 Elsevier B.V. All rights reserved.</p>