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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Figueiredo, Vitor
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Publications (3/3 displayed)
- 2013Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillarscitations
- 2012p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistorscitations
- 2008Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic coppercitations
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article
Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper
Abstract
Thin films of copper oxide were obtained through thermal oxidation (100-450 degrees C) of evaporated metallic copper (Cu) films on glass substrates. The X-ray diffraction (XRD) studies confirmed the cubic Cu phase of the as-deposited films. The films annealed at 100 degrees C showed mixed Cu-Cu(2)O phase, whereas those annealed between 200 and 300 degrees C showed a single cubic Cu(2)O phase. A single monoclinic CuO phase was obtained from the films annealed between 350 and 450 degrees C. The positive sign of the Hall coefficient confirmed the p-type conductivity in the films with Cu(2)O phase. However, a relatively poor crystallinity of these films limited the p-type characteristics. The films with Cu and CuO phases show n-type conductivity. The surface of the as-deposited is smooth (RMS roughness of 1.47 nm) and comprised of uniformly distributed grains (AFM and SEM analysis). The post-annealing is found to be effective on the distribution of grains and their sizes. The poor transmittance of the as-deposited films (<1%) is increased to a maximum of similar to 80% (800 nm) on annealing at 200 degrees C. The direct allowed band gap is varied between 2.03 and 3.02 eV.