Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (10/10 displayed)

  • 2016Wild 2 grains characterized combining MIR/FIR/Raman micro-spectroscopy and FE-SEM/EDS analysescitations
  • 2011Formation of CO_2 and OCS after cosmic ion irradiation of icy grain mantlescitations
  • 2007Combined Micro-Infrared (IR) and Micro-Raman Measurements on Stratospheric Interplanetery Dust Particlescitations
  • 2004Raman spectroscopy of ion irradiated diamond45citations
  • 2004Infrared and Raman spectroscopies of refractory residues left over after ion irradiation of nitrogen-bearing icy mixtures47citations
  • 2004A Raman study of ion irradiated icy mixtures61citations
  • 2004Raman and photoluminescence study of ion beam irradiated porous silicon: a case for the astrophysical extended red emission?12citations
  • 2003A Raman study of ion irradiated icy mixturescitations
  • 2002Infrared and Raman spectroscopy of refractory residues left over after ion irradiation of nitrogen bearing icy mixturescitations
  • 2000Laboratory and astronomical IR spectra: an experimental clue for their comparisoncitations

Places of action

Chart of shared publication
Djouadi, Z.
1 / 4 shared
Brucato, John Robert
1 / 7 shared
Brunetto, R.
2 / 11 shared
Palumbo, Pasquale
1 / 5 shared
Merouane, S.
1 / 5 shared
Rietmeijer, F. J. M.
1 / 3 shared
Le Sergeant Dhendecourt, L.
1 / 1 shared
Rotundi, Alessandra
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Mennella, V.
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Borg, J.
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Palumbo, Mariaelisabetta
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Ferrari, Marco
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Dartois, E.
1 / 15 shared
Della Corte, Vincenzo
1 / 6 shared
Leto, Giuseppe
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Strazzulla, Giovanni
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Fulvio, D.
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Ioppolo, S.
1 / 1 shared
Kanuchova, Z.
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Sangiorgio, I.
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Garozzo, M.
1 / 3 shared
Colangeli, Luigi
1 / 5 shared
Ferrini, G.
1 / 10 shared
Palomba, E.
1 / 8 shared
Strazzulla, G.
3 / 5 shared
Palumbo, M. E.
2 / 6 shared
Ferini, G.
4 / 4 shared
Longo, P.
1 / 6 shared
Compagnini, G.
1 / 5 shared
Chart of publication period
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2011
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Co-Authors (by relevance)

  • Djouadi, Z.
  • Brucato, John Robert
  • Brunetto, R.
  • Palumbo, Pasquale
  • Merouane, S.
  • Rietmeijer, F. J. M.
  • Le Sergeant Dhendecourt, L.
  • Rotundi, Alessandra
  • Mennella, V.
  • Borg, J.
  • Palumbo, Mariaelisabetta
  • Ferrari, Marco
  • Dartois, E.
  • Della Corte, Vincenzo
  • Leto, Giuseppe
  • Strazzulla, Giovanni
  • Fulvio, D.
  • Ioppolo, S.
  • Kanuchova, Z.
  • Sangiorgio, I.
  • Garozzo, M.
  • Colangeli, Luigi
  • Ferrini, G.
  • Palomba, E.
  • Strazzulla, G.
  • Palumbo, M. E.
  • Ferini, G.
  • Longo, P.
  • Compagnini, G.
OrganizationsLocationPeople

article

Raman and photoluminescence study of ion beam irradiated porous silicon: a case for the astrophysical extended red emission?

  • Longo, P.
  • Compagnini, G.
  • Baratta, Giuseppe
  • Strazzulla, G.
Abstract

We have measured photoluminescence (PL) and Raman spectra of porous silicon (PS) thin films subjected to irradiation with 30 keV He<SUP>+</SUP> ion beams. Fluence has been changed between 10<SUP>14</SUP> and 10<SUP>16</SUP> ions/cm<SUP>2</SUP>. The results show a decrease of the photoluminescence intensity by increasing the ion fluence, probably due to the formation of induced non-radiative recombination centres. The increase of defects density and the partial amorphization of the samples have been studied through Raman spectroscopy and a comparison with the induced damage in single-crystalline silicon has been considered. The characteristic PL wavelength (600-800 nm) supports the hypothesis that silicon nanostructures are an attractive carrier for the so called "Extended Red Emission" (ERE) observed in many astronomical objects. However, the possibility to tune the PL quantum efficiency by ion irradiation indicates that silicon nanostructures in space could loss their photoluminescence capability in those environments where cosmic ion bombardment plays a relevant role....

Topics
  • porous
  • density
  • photoluminescence
  • thin film
  • Silicon
  • defect
  • Raman spectroscopy