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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Zhang, Heng
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Publications (15/15 displayed)
- 2024Strong Substrate Influence on Atomic Structure and Properties of Epitaxial VO 2 Thin Filmscitations
- 2024Strong substrate influence on atomic structure and properties of epitaxial VO2 thin filmscitations
- 2023Strong substrate influence on atomic structure and properties of epitaxial VO2 thin filmscitations
- 2023Effects of Intermixing in Sb2Te3/Ge1+xTe Multilayers on the Thermoelectric Power Factorcitations
- 2023Dislocations and a domains coupling in PbTiO3 thin filmscitations
- 2023N=8 Armchair Graphene Nanoribbons: Solution Synthesis and High Charge Carrier Mobility**
- 2023N=8 armchair graphene nanoribbonscitations
- 2022Nanostructure and thermal power of highly-textured and single-crystal-like Bi2Te3 thin filmscitations
- 2022Nanostructure and thermal power of highly-textured and single-crystal-like Bi2Te3 thin filmscitations
- 2021Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applicationscitations
- 2021Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applicationscitations
- 2020Differences in Sb2Te3 growth by pulsed laser and sputter depositioncitations
- 2020Frequency-domain study of nonthermal gigahertz phonons reveals Fano coupling to charge carrierscitations
- 2019Fluorine‐Free Noble Salt Anion for High‐Performance All‐Solid‐State Lithium–Sulfur Batteriescitations
- 2017Vibrational spectroscopic studies combined with viscosity analysis and VTF calculation for hybrid polymer electrolytescitations
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article
Differences in Sb2Te3 growth by pulsed laser and sputter deposition
Abstract
High quality van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb2Te3 films. We compare films grown by radio frequency sputtering and pulsed laser deposition (PLD). The growth factors that influence the crystal quality for each method are different. For PLD grown films a thin amorphous Sb2Te3 seed layer most significantly influences the crystal quality. In contrast, the crystalline quality of films grown by sputtering is rather sensitive to the deposition temperature and less affected by the presence of a seed layer. This difference is somewhat surprising as both methods are out-of-thermal-equilibrium plasma-based methods. Non-adiabatic quantum molecular dynamics simulations show that this difference originates from the density of excited atoms in the plasma. The PLD plasma is more intense and with higher energy than that used in sputtering, and this increases the electronic temperature of the deposited atoms, which concomitantly increases the adatom diffusion lengths in PLD. In contrast, the adatom diffusivity is dominated by the thermal temperature for sputter grown films. These results explain the wide range of Sb2Te3 and superlattice crystal qualities observed in the literature. These results indicate that, contrary to popular belief, plasma-based deposition methods are suitable for growing high quality crystalline chalcogenides. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.