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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Momand, Jamo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2022Ultrathin, sputter-deposited, amorphous alloy films of ruthenium and molybdenumcitations
- 2022Ultrathin, sputter-deposited, amorphous alloy films of ruthenium and molybdenumcitations
- 2022Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Filmscitations
- 2022Nanostructure and thermal power of highly-textured and single-crystal-like Bi2Te3 thin filmscitations
- 2022Nanostructure and thermal power of highly-textured and single-crystal-like Bi2Te3 thin filmscitations
- 2021Polytriphenylamine composites for energy storage electrodes:Effect of pendant vs. backbone polymer architecture of the electroactive groupcitations
- 2021Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applicationscitations
- 2021Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applicationscitations
- 2021Controlling phase separation in thermoelectric Pb1-xGexTe to minimize thermal conductivitycitations
- 2021Polytriphenylamine composites for energy storage electrodescitations
- 2020Single-Source, Solvent-Free, Room Temperature Deposition of Black γ-CsSnI 3 Filmscitations
- 2020Differences in Sb2Te3 growth by pulsed laser and sputter depositioncitations
- 2020Single‐Source, Solvent‐Free, Room Temperature Deposition of Black γ‐CsSnI3 Filmscitations
- 2019Chemical Solution Deposition of Ordered 2D Arrays of Room-Temperature Ferrimagnetic Cobalt Ferrite Nanodotscitations
- 2019High Resolution Imaging of Chalcogenide Superlattices for Data Storage Applicationscitations
- 2019Low temperature epitaxy of tungsten-telluride heterostructure filmscitations
- 2019High Resolution Imaging of Chalcogenide Superlattices for Data Storage Applications:Progress and Prospectscitations
- 2018Tailoring the epitaxy of Sb2Te3 and GeTe thin films using surface passivationcitations
- 2017Formation of resonant bonding during growth of ultrathin GeTe filmscitations
- 2016Crystallization Kinetics of Supercooled Liquid Ge-Sb Based on Ultrafast Calorimetrycitations
- 2016Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin filmscitations
- 2014Reversible amorphous-crystalline phase changes in a wide range of Se1-xTex alloys studied using ultrafast differential scanning calorimetrycitations
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article
Differences in Sb2Te3 growth by pulsed laser and sputter deposition
Abstract
High quality van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb2Te3 films. We compare films grown by radio frequency sputtering and pulsed laser deposition (PLD). The growth factors that influence the crystal quality for each method are different. For PLD grown films a thin amorphous Sb2Te3 seed layer most significantly influences the crystal quality. In contrast, the crystalline quality of films grown by sputtering is rather sensitive to the deposition temperature and less affected by the presence of a seed layer. This difference is somewhat surprising as both methods are out-of-thermal-equilibrium plasma-based methods. Non-adiabatic quantum molecular dynamics simulations show that this difference originates from the density of excited atoms in the plasma. The PLD plasma is more intense and with higher energy than that used in sputtering, and this increases the electronic temperature of the deposited atoms, which concomitantly increases the adatom diffusion lengths in PLD. In contrast, the adatom diffusivity is dominated by the thermal temperature for sputter grown films. These results explain the wide range of Sb2Te3 and superlattice crystal qualities observed in the literature. These results indicate that, contrary to popular belief, plasma-based deposition methods are suitable for growing high quality crystalline chalcogenides. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.