Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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977 Locations available

693.932 PEOPLE
693.932 People People

693.932 People

Show results for 693.932 people that are selected by your search filters.

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Naji, M.
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Makkonen, Ilja

  • Google
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University of Helsinki

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (16/16 displayed)

  • 2022A combined experimental and theoretical study of small and large vacancy clusters in tungsten16citations
  • 2020Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx8citations
  • 2020Segregation of Ni at early stages of radiation damage in NiCoFeCr solid solution alloys49citations
  • 2020Ti-Sr antisite12citations
  • 2020Ti-Sr antisite : An abundant point defect in SrTiO312citations
  • 2020Source/Drain Materials for Ge nMOS Devices : Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx8citations
  • 2020Source/Drain Materials for Ge nMOS Devices8citations
  • 2019Evolution of phosphorus-vacancy clusters in epitaxial germanium16citations
  • 2019Ga vacancies and electrical compensation in beta-Ga2O3 thin films studied with positron annihilation spectroscopy14citations
  • 2019Heavily phosphorus doped germanium:Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation7citations
  • 2019Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy14citations
  • 2017Positron annihilation analysis of the atomic scale changes in oxidized Zircaloy-4 samples13citations
  • 2016Review-Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductors8citations
  • 2016Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium13citations
  • 2015Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspects9citations
  • 2007Modeling momentum distributions of positron annihilation radiation in solids ; Positroniannihilaatiosäteilyn liikemääräjakaumat kiinteissä aineissa: elektronirakenneohjelmiin perustuva mallinnus52citations

Places of action

Chart of shared publication
Barthe, Marie-France
1 / 8 shared
Olsson, Pär
1 / 19 shared
Egger, Werner
1 / 7 shared
Hu, Zhiwei
1 / 7 shared
Desgardin, Pierre
1 / 4 shared
Yang, Qigui
1 / 3 shared
Slotte, Jonatan
7 / 8 shared
Rosseel, Erik
3 / 5 shared
Loo, Roger
5 / 17 shared
Vandervorst, Wilfried
5 / 17 shared
Khanam, Afrina
5 / 6 shared
Pourtois, Geoffrey
5 / 16 shared
Douhard, Bastien
3 / 4 shared
Porret, Clement
4 / 5 shared
Tirrito, Matteo
3 / 4 shared
Vohra, Anurag
5 / 6 shared
Djurabekova, Flyura Gatifovna
1 / 37 shared
Zhang, Yanwen
1 / 22 shared
Nordlund, Kai
1 / 54 shared
Heikinheimo, Janne
1 / 6 shared
Granberg, Fredric
1 / 15 shared
Weber, W. J.
1 / 11 shared
Tuomisto, Filip
9 / 44 shared
Velisa, G.
1 / 7 shared
Bei, H.
1 / 14 shared
Xue, H.
1 / 2 shared
Karjalainen, Antti
4 / 6 shared
Prozheeva, Vera
4 / 5 shared
Bickermann, Matthias
2 / 6 shared
Guguschev, Christo
2 / 3 shared
Markurt, Toni
2 / 5 shared
Wagner, Gunter
2 / 2 shared
Baldini, Michele
2 / 2 shared
Kujala, J.
3 / 5 shared
Ortner, S.
1 / 5 shared
Blackmur, M.
1 / 1 shared
Heikinheimo, J.
1 / 3 shared
Napolitani, Enrico
1 / 11 shared
Kalliovaara, T.
1 / 1 shared
Slotte, J.
1 / 2 shared
Milazzo, Ruggero
1 / 2 shared
Impellizzeri, G.
1 / 8 shared
Fortunato, G.
1 / 10 shared
Veal, T. D.
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Ashwin, M. J.
1 / 5 shared
Segercrantz, N.
1 / 7 shared
Chart of publication period
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2020
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2007

Co-Authors (by relevance)

  • Barthe, Marie-France
  • Olsson, Pär
  • Egger, Werner
  • Hu, Zhiwei
  • Desgardin, Pierre
  • Yang, Qigui
  • Slotte, Jonatan
  • Rosseel, Erik
  • Loo, Roger
  • Vandervorst, Wilfried
  • Khanam, Afrina
  • Pourtois, Geoffrey
  • Douhard, Bastien
  • Porret, Clement
  • Tirrito, Matteo
  • Vohra, Anurag
  • Djurabekova, Flyura Gatifovna
  • Zhang, Yanwen
  • Nordlund, Kai
  • Heikinheimo, Janne
  • Granberg, Fredric
  • Weber, W. J.
  • Tuomisto, Filip
  • Velisa, G.
  • Bei, H.
  • Xue, H.
  • Karjalainen, Antti
  • Prozheeva, Vera
  • Bickermann, Matthias
  • Guguschev, Christo
  • Markurt, Toni
  • Wagner, Gunter
  • Baldini, Michele
  • Kujala, J.
  • Ortner, S.
  • Blackmur, M.
  • Heikinheimo, J.
  • Napolitani, Enrico
  • Kalliovaara, T.
  • Slotte, J.
  • Milazzo, Ruggero
  • Impellizzeri, G.
  • Fortunato, G.
  • Veal, T. D.
  • Ashwin, M. J.
  • Segercrantz, N.
OrganizationsLocationPeople

article

Segregation of Ni at early stages of radiation damage in NiCoFeCr solid solution alloys

  • Djurabekova, Flyura Gatifovna
  • Makkonen, Ilja
  • Zhang, Yanwen
  • Nordlund, Kai
  • Heikinheimo, Janne
  • Granberg, Fredric
  • Weber, W. J.
  • Tuomisto, Filip
  • Velisa, G.
  • Bei, H.
  • Xue, H.
Abstract

| openaire: EC/H2020/633053/EU//EUROfusion ; Defect evolution under irradiation is investigated in a set of single-phase concentrated solid solution alloys (SP-CSAs) containing Ni with Co, Fe and/or Cr. We show that atomic segregation of Ni takes place already at very early stages of radiation damage in the 2–4 element SP-CSAs containing Fe or Cr, well below 1 dpa. We arrive at this conclusion by following the evolution of positron annihilation signals as a function of irradiation dose in single crystal samples, complemented by molecular dynamics simulations in the same model systems for high entropy alloys (HEAs). This manifestation of short-range order calls attention to composition fluctuations at the atomic level in irradiated HEAs. Ion irradiation may induce short-range order in certain alloys due to chemically biased elemental diffusion. The work highlights the necessity of updating the assumption of a totally random arrangement in the irradiated alloys, even though the alloys before irradiation have random arrangements of different chemical elements. ; Peer reviewed

Topics
  • impedance spectroscopy
  • single crystal
  • phase
  • simulation
  • semiconductor
  • molecular dynamics
  • defect
  • random