| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wilkinson, A. J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2020Scratching the surface: Elastic rotations beneath nanoscratch and nanoindentation testscitations
- 2018On the Influence of Nb/Ti Ratio on Environmentally-Assisted Crack Growth in High-Strength Nickel-Based Superalloyscitations
- 2017Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffractioncitations
- 2017Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffractioncitations
- 2017On the microtwinning mechanism in a single crystal superalloycitations
- 2017Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin filmscitations
- 2017A synchrotron X-ray diffraction study of non-proportional strain-path effectscitations
- 2016Assessment of X-ray diffraction and crystal plasticity lattice strain evolutions under biaxial loadingcitations
- 2015Measurements of stress fields near a grain boundarycitations
- 2015A synchrotron X-ray diffraction study of in situ biaxial deformationcitations
- 2006Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging
- 2002High temperature fatigue crack growth in powder processed nickel based superalloy U720Licitations
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article
Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films
Abstract
We describe the development of cross-correlation based high resolution electron backscatter diffraction (HR-EBSD) and electron channelling contrast imaging (ECCI), in the scanning electron microscope (SEM), to quantitatively map the strain variation and lattice rotation and determine the density and identify dislocations in nitride semiconductor thin films. These techniques can provide quantitative, rapid, non-destructive analysis of the structural properties of materials with a spatial resolution of order of tens of nanometers. HR-EBSD has a sensitivity to changes of strain and rotation of the order of 10−4 and 0.01° respectively, while ECCI can be used to image single dislocations up to a dislocation density of order 1010 cm−2. In the present work, we report the application of the cross-correlation based HR-EBSD approach to determine the tilt, twist, elastic strain and the distribution and type of threading dislocations in InAlN/AlN/GaN high electron mobility transistor (HEMT) structures grown on two different substrates, namely SiC and sapphire. We describe our procedure to estimate the distribution of geometrically necessary dislocations (GND) based on Nye-Kroner analysis and compare them with the direct imaging of threading dislocations (TDs) by ECCI. Combining data from HR-EBSD and ECCI observations allowed the densities of pure edge, mixed and pure screw threading dislocations to be fully separated.