| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Trager-Cowan, Carol
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2022Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
- 2022Crystalline grain engineered CsPbIBr 2 films for indoor photovoltaicscitations
- 2022Crystalline grain engineered CsPbIBr2 films for indoor photovoltaicscitations
- 2020Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscopecitations
- 2020Nanomechanical behaviour of individual phases in WC-Co cemented carbides, from ambient to high temperaturecitations
- 2020Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (112ˉ0) GaN
- 2020Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscopecitations
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2020Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaNcitations
- 2018Dislocation contrast in electron channelling contrast images as projections of strain-like componentscitations
- 2017Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffractioncitations
- 2017Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffractioncitations
- 2017Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56citations
- 2017Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin filmscitations
- 2017Exploring transmission Kikuchi diffraction using a Timepix detectorcitations
- 2016Reprint of
- 2016Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faultscitations
- 2016Electron channelling contrast imaging for III-nitride thin film structurescitations
- 2015Digital direct electron imaging of energy-filtered electron backscatter diffraction patternscitations
- 2013Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscopecitations
- 2012Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscopecitations
- 2008Rare earth doping of III-nitride alloys by ion implantationcitations
- 2004Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes
- 2002Structural and optical properties of InGaN/GaN layers close to the critical layer thicknesscitations
- 2001Compositional pulling effects in InxGa1_xN/GaN layerscitations
Places of action
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article
Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films
Abstract
We describe the development of cross-correlation based high resolution electron backscatter diffraction (HR-EBSD) and electron channelling contrast imaging (ECCI), in the scanning electron microscope (SEM), to quantitatively map the strain variation and lattice rotation and determine the density and identify dislocations in nitride semiconductor thin films. These techniques can provide quantitative, rapid, non-destructive analysis of the structural properties of materials with a spatial resolution of order of tens of nanometers. HR-EBSD has a sensitivity to changes of strain and rotation of the order of 10−4 and 0.01° respectively, while ECCI can be used to image single dislocations up to a dislocation density of order 1010 cm−2. In the present work, we report the application of the cross-correlation based HR-EBSD approach to determine the tilt, twist, elastic strain and the distribution and type of threading dislocations in InAlN/AlN/GaN high electron mobility transistor (HEMT) structures grown on two different substrates, namely SiC and sapphire. We describe our procedure to estimate the distribution of geometrically necessary dislocations (GND) based on Nye-Kroner analysis and compare them with the direct imaging of threading dislocations (TDs) by ECCI. Combining data from HR-EBSD and ECCI observations allowed the densities of pure edge, mixed and pure screw threading dislocations to be fully separated.