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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Newman, N.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2017The magnetic, electrical and structural properties of copper-permalloy alloyscitations
- 2016<i>In-situ</i> electron paramagnetic resonance studies of paramagnetic point defects in superconducting microwave resonatorscitations
- 2013Investigations of the disorder in the Ta<i>x</i>N thin films: On the first order Raman spectrum of the rock salt crystal structurecitations
- 2012Experimental study of the kinetically-limited decomposition of ZnGeAs2 and its role in determining optimal conditions for thin film growthcitations
- 2012Thermoelectric properties of Zn5Sb4In2-δ (δ = 0.15)citations
- 2010Low-temperature transport properties of Ta<sub>x</sub>N thin films (0.72 ⩽ x ⩽ 0.83)citations
- 2009Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O-3 (100) thin filmscitations
- 2009Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O-3 (100) thin filmscitations
- 2007Structure-dielectric property relationship for vanadium- and scandium-doped barium strontium titanatecitations
- 2007Structure-dielectric property relationship for vanadium- and scandium-doped barium strontium titanatecitations
- 2006Recent progress towards the development of ferromagnetic nitride semiconductors for spintronic applicationscitations
- 2006Recent progress towards the development of ferromagnetic nitride semiconductors for spintronic applicationscitations
- 2005High-field superconductivity in alloyed MgB2 thin filmscitations
- 2005Experimental and theoretical investigation of the structural, chemical, electronic, and high frequency dielectric properties of barium cadmium tantalate-based ceramicscitations
- 2005Experimental and theoretical investigation of the structural, chemical, electronic, and high frequency dielectric properties of barium cadmium tantalate-based ceramicscitations
Places of action
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article
Structure-dielectric property relationship for vanadium- and scandium-doped barium strontium titanate
Abstract
<p>This paper reports the results of an investigation of the structure-property relationship of vanadium (donor) and scandium (acceptor) doped Ba0.7Sr0.3TiO3, While V doping produces a fully miscible Ba0.7Sr0.3Ti1-xVxO3 alloy, Sc doping results in an inhomogeneous microstructure with grains containing a Sc-doped Ba-rich shell and an undoped Sr-rich core. This results from a solution-precipitation process that works in combination with a thermodynamic driving force for the preferential segregation of Sc into Ba-rich regions. The Curie temperature (T-c) of Ba0.7Sr0.3TiO3 decreases with increasing dopant concentration from a T-c of 40 degrees C for undoped material to 18 degrees C for 4 mol.% V and 22 degrees C for 4 mol.% Sc (i.e., Ba0.7Sr0.3Ti0.96V0.04O3, Ba0.7Sr0.3Ti0.96Sc0.04O3). Sc- and V-doped materials are found to have significantly reduced dielectric constants at their Curie temperature than their undoped counterpart. This is most evident for Sc doping, where a 4 mol.% concentration has a dielectric constant of 1000 at T-c, a factor of 12 times smaller than undoped Ba0.7Sr0.3TiO3. (C) 2007 Published by Elsevier Ltd on behalf of Acta Materialia Inc.</p>