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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Hutt, D. A.
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Topics
Publications (6/6 displayed)
- 2014Functionalised copper nanoparticles as catalysts for electroless platingcitations
- 2008Integrated optical and electronic interconnect printed circuit board manufacturing
- 2006Interfacial reactions between molten Sn-Bi-X solders and Cu substrates for liquid solder interconnectscitations
- 2002Electroless nickel bumping of aluminum bondpads - Part II: Electroless nickel platingcitations
- 2000Investigation of a solder bumping technique for flip-chip interconnection
- 2000Under bump metallisation of fine pitch flip-chip using electroless nickel depositioncitations
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article
Interfacial reactions between molten Sn-Bi-X solders and Cu substrates for liquid solder interconnects
Abstract
This paper reports on the interfacial reaction kinetics between molten Sn-58Bi solder and Cu substrates for extended temporal scales. Also studied are the effects of a series of elemental additions of 1-2 wt.% Al, Cr, Cu, Si, Zn, Ag, An, Pt and Nb into the basic Sn-5813i solder, in an attempt to produce a barrier layer that slows down intermetallic compound (IMC) growth. At temperatures between 200 and 240 degrees C, grain boundary-/molten channel-controlled growth of eta-phase (Cu6Sn5), followed by diffusion-controlled simultaneous growth of the epsilon-phase (Cu3Sn) and eta-phase (Cu6Sn5), between the molten Sn-5813i solder and the Cu substrate was observed, and a layer of 6 mu m Cu could survive for approximately 24-48 h. Addition of 1 wt.% Zn resulted in a layer of gamma-Cu5Zn8, instead of Cu3Sn and Cu6Sn5, forming at the interface, leading to an increase in the lifetime of the Cu substrate to greater than 120 h at 200 degrees C, while the other additions failed to slow down IMC formation. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved