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Całus, Dariusz
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article
Electrical properties of clathrate formed on the basis of a p-type semiconductor with 2D guest positions filled with ferroelectric and propolis
Abstract
<jats:title>Abstract</jats:title><jats:p>The paper presents findings on the characteristics of GaSe fourfold-expanded matrix with propolis and sodium nitrite (NaNO<jats:sub>2</jats:sub>), intercalated in between matrix layers. The nature of changes of impedance frequency behavior, electric loss tangent, and dielectric permittivity under normal conditions, when illumination is applied, and in a constant magnetic field of synthesized intercalate GaSe < NaNO<jats:sub>2</jats:sub> > and bi-intercalate GaSe < NaNO<jats:sub>2</jats:sub> + Propolis > has been identified. The extraordinary effects have been obtained, indicating that clathrate GaSe < NaNO<jats:sub>2</jats:sub> > has immense values of photo- and magneto-capacitive effects while a current–voltage (I–V) characteristic of clathrate GaSe < NaNO<jats:sub>2</jats:sub> + Propolis > exhibits the hysteresis behavior typical of memristor structures. The memory effect related to pseudo-capacitive charge accumulation has been found and shown to be due to oxidation–reduction reactions.</jats:p>