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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Jackson, Howard E.
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Topics
Publications (8/8 displayed)
- 2020Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopycitations
- 2012Photomodulated Rayleigh scattering from single semiconductor nanowires
- 2011Photomodulated rayleigh scattering of single semiconductor nanowirescitations
- 2011III-V semiconductor nanowires for optoelectronic device applicationscitations
- 2009Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures
- 2008High purity GaAs nanowires free of planar defectscitations
- 2002Mechanics of load transfer from matrix to fiber under flexural loading in a glass matrix composite using microfluorescence spectroscopycitations
- 2001Characterization of residual stresses in a sapphire-fiber-reinforced glass-matrix composite by micro-fluorescence spectroscopycitations
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article
Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy
Abstract
<p>We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory. The ground state transition energy identified from photocurrent spectra is seen to be consistent with photoluminescence emitted from a cluster of nanowires from the same growth substrate. From the energies of the observed bands we determine the spin orbit and crystal field energies in Wurtzite InAs. This information is vital to the development of crystal phase engineering of this important III-V semiconductor. [Figure not available: see fulltext.]</p>