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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Thelander, Kimberly Dick
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2015Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogencitations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2011Crystal structure control in Au-free self-seeded InSb wire growth.citations
- 2008Control of GaP and GaAs Nanowire Morphology through Particle and Substrate Chemical Modification.citations
- 2007Directed growth of branched nanowire structures
- 2007Targeted deposition of Au aerosol nanoparticles on vertical nanowires for the creation of nanotreescitations
- 2006Crystal structure of branched epitaxial III-V nanotreescitations
- 2005A new understanding of au-assisted growth of III-V semiconductor nanowirescitations
- 2005Role of the Au/III-V interaction in the Au-assisted growth of III-V branched nanostructurescitations
- 2004Growth of GaP nanotree structures by sequential seeding of 1D nanowirescitations
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article
High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires
Abstract
We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 mu m(-1). The hexagonal cross-sectional wires are terminated by -type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the -type as well as downwards-directed overgrowth of the WZ segments were formed at the WZ to ZB transition to compensate for the observed diameter increase and facet rotation. In the case of WZ-ZB multiple heterostructures, we observed slightly higher densities of stacking faults and twin planes compared to single heterostructures.