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Ager, J. W.
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Publications (11/11 displayed)
- 2013P-type and undoped InGaN across the entire alloy composition range
- 2013P-type InGaN across the entire alloy composition rangecitations
- 2012Embedded binary eutectic alloy nanostructurescitations
- 2009Properties of native point defects in In1-xAlxN alloyscitations
- 2008Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applicationscitations
- 2008Band gap bowing parameter of In1-x Alx Ncitations
- 2008High efficiency InAlN-based solar cellscitations
- 2008Low-temperature grown compositionally graded InGaN filmscitations
- 2002Band anticrossing in highly mismatched group II-VI semiconductor alloys
- 2002Band anticrossing effects in MgyZn1-yTe 1-xSex alloyscitations
- 2000Synthesis of III-Nx-V1-x Thin Films by N Ion Implantationcitations
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article
Embedded binary eutectic alloy nanostructures
Abstract
The properties of binary eutectic alloy nanostructures embedded within a matrix are discussed. It is demonstrated that GeAu and GeSn nanostructures embedded in SiO <sub>2</sub> form in a bilobed structure as predicted by a simple theory. Upon heating, the nanostructures melt and assume a nominally compositionally homogeneous structure. Slow cooling of the liquid returns the nanostructure to its equilibrium bilobed morphology. Rapid quenching yields a kinetically limited, nearly compositionally homogeneous solid. Rapid thermal annealing can convert this metastable structure again into the bilobed structure. It is, therefore, possible to switch between the bilobed structure and the homogenous structure. The kinetics of the homogeneous composition to bilobe structure transformation depend on composition. Tuning the composition enables one to tune the transformation temperature. Possible technological applications of these nanostructures are discussed. © 2012 TMS.