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Vankhade, Dhaval
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article
Electrical Properties of Compact Drop-Casted Cu2SnS3 Films
Abstract
<p>We investigated temperature-dependent electrical conduction of Cu<sub>2</sub>SnS<sub>3</sub> (CTS) thin films in the range of 77–500 K synthesized by drop-casting molecular ink. The films were directly formed by drop-casted molecular ink, consisting of a Cu<sup>+2</sup>-Sn<sup>+2</sup>-thiourea complex dissolved in a mixture of ethylene glycol–isopropyl alcohol and annealed. The CTS films have a smooth layer with a compact structure, as revealed by cross-sectional scanning electron microscopy. The films are p-type and show a band gap of 1.18 eV. The electrical conductivity and Hall mobility of the films were found to be 1.1 S/cm and 6.72 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, respectively. Data from temperature-dependent measurements show hopping and thermally activated conduction below and above 300 K, with an activation energy of ∼ 10 and 90 meV, respectively. Our results suggest that the drop-casted CTS films can be used as an absorber layer in thin film solar cells at an affordable cost.</p>