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| Naji, M. |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azevedo, Nuno Monteiro |
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Sathyamoorthy, R.
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Topics
Publications (8/8 displayed)
- 2011Dielectric and relaxation properties of thermally evaporated nanostructured bismuth sulfide thin filmscitations
- 2009High-energy heavy-ion induced physical and surface-chemical modifications in polycrystalline cadmium sulfide thin filmscitations
- 2008Influence of porous morphology on optical dispersion properties of template free mesoporous titanium dioxide (TiO2) filmscitations
- 2007Effect of 80 MeV oxygen ion beam irradiation on the properties of CdTe thin filmscitations
- 2007Swift heavy ion beam irradiation induced modifications in structural, morphological and optical properties of CdS thin filmscitations
- 2006Structural properties of CdTe thin films on different substrates
- 2006Structural and photoluminescence properties of swift heavy ion irradiated CdS thin filmscitations
- 2003Structural, Optical and Electrical Properties of Zinc Phthalocyanine (ZnPc) thin films
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article
Effect of 80 MeV oxygen ion beam irradiation on the properties of CdTe thin films
Abstract
<p>Polycrystalline CdTe thin films were irradiated with 80 MeV oxygen (O<sup>6+</sup>) ions for various fluences and its effect on the composition, structure, surface topography and optical properties have been investigated. The as-grown films are found to be slightly Te-rich in composition and there is no significant change in the composition after irradiation. X-ray diffraction analysis shows a high degree of crystallite orientation along the (111) plane of cubic phase CdTe. Upon irradiation a large decrease in intensity of the (111) plane and a small shift in the peak position has been resulted. The shift in the peak position is correlated with the change in the residual stress. The surface roughness of the films get increased after irradiation. A decrease in the grain size was observed after irradiation due to ion-induced recrystallization. The optical band gap energy decreased from 1.53 eV for as-grown film to 1.46 eV upon irradiation. The photoluminescence (PL) spectrum is dominated by the defect band and the effect of irradiation has been discussed and correlated with the observed change in the XRD peak position and optical band gap.</p>