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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Al-Douri, Yarub
in Cooperation with on an Cooperation-Score of 37%
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Publications (3/3 displayed)
- 2019Synthesis and evaluation of the structural, optical, and antibacterial properties of copper oxide nanoparticlescitations
- 2015Ab initio method of optical investigations of CdS1−xTex alloys under quantum dots diameter effectcitations
- 2015Structural, optical and electrical properties of Cu2Zn1źxCdxSnS4 quinternary alloys nanostructures deposited on porous siliconcitations
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article
Structural, optical and electrical properties of Cu2Zn1źxCdxSnS4 quinternary alloys nanostructures deposited on porous silicon
Abstract
The Cu2Zn1źxCdxSnS4 quinternary alloy nanostructures with different Cd contents were grown using spin coating technique on porous silicon (63.93 %) substrate. The structural properties of Cu2Zn1źxCdxSnS4/PS were investigated by X-ray diffraction and field emission-scanning electron microscope (FE-SEM). The optical properties studied through photoluminescence technique, indicated that the band gap is shifted as Cd content increases from 1.84 eV at x = 0 to 1.76 eV at x = 1. The electrical characterization of the Ag/n-PS/Cu2Zn1źxCdxSnS4/Ag diode through current to voltage (I---V) characterization shows the highest photo-response of (value if any) at Cu2Zn0.4Cd0.6SnS4 composition.