| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Rodrigues, Alexandra
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (2/2 displayed)
Places of action
| Organizations | Location | People |
|---|
article
Hydrogenated nanocrystalline silicon thin films with promising thermoelectric properties
Abstract
<p>The search for materials with suitable thermoelectric properties that are environmentally friendly and abundant led us to investigate p- and n-type hydrogenated nanocrystalline silicon (nc-Si:H) thin films, produced by plasma-enhanced chemical vapor deposition. The Seebeck coefficient and power factor were measured at room temperature showing optimized values of 512 µV K<sup>−1</sup> and 3.6 × 10<sup>−5</sup> W m<sup>−1</sup> K<sup>−2</sup>, for p-type, and −188 µV K<sup>−1</sup> and 2.2 × 10<sup>−4</sup> W m<sup>−1</sup> K<sup>−2</sup>, for n-type thin films. The thermoelectric output power of one nc-Si:H pair of both n- and p-type materials is ~91 µW per material cm<sup>3</sup>, for a thermal gradient of 8 K. The output voltage and current values show a linear dependence with the number of pairs interconnected in series and/or parallel and show good integration performance.</p>