| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Gonçalves, Alexandra
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2009Zinc oxide, a multifunctional material: from material to device applicationscitations
- 2008Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applicationscitations
- 2006Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devicescitations
- 2005A Study on the Electrical Properties of ZnO Based Transparent TFTscitations
- 2005ITO films with enhanced electrical properties deposited on unheated ZnO-coated polymer substratescitations
Places of action
| Organizations | Location | People |
|---|
article
Zinc oxide, a multifunctional material: from material to device applications
Abstract
In this paper we report on some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide produced by radio frequency magnetron sputtering at room temperature, with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties, or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer to our experience in producing n-type doped zinc oxide as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors, while the undoped zinc oxide can be used as active layer of fully transparent thin film transistors.