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Chandramohan, S.
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Publications (7/7 displayed)
- 2024Parafilm Enabled Rapid and Scalable Delamination/Integration of Graphene for High‐Performance Capacitive Touch Sensorcitations
- 2009High-energy heavy-ion induced physical and surface-chemical modifications in polycrystalline cadmium sulfide thin filmscitations
- 2008Influence of porous morphology on optical dispersion properties of template free mesoporous titanium dioxide (TiO2) filmscitations
- 2007Effect of 80 MeV oxygen ion beam irradiation on the properties of CdTe thin filmscitations
- 2007Swift heavy ion beam irradiation induced modifications in structural, morphological and optical properties of CdS thin filmscitations
- 2006Structural properties of CdTe thin films on different substrates
- 2006Structural and photoluminescence properties of swift heavy ion irradiated CdS thin filmscitations
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article
High-energy heavy-ion induced physical and surface-chemical modifications in polycrystalline cadmium sulfide thin films
Abstract
<p>The effect of high electronic energy deposition on the structure, surface topography, optical properties, and electronic structure of cadmium sulfide (CdS) thin films have been investigated by irradiating the films with 100 MeV Ag<sup>+7</sup> ions at different ion fluences in the range of 10<sup>12</sup>-10<sup>13</sup> ions/cm<sup>2</sup>. The CdS films were deposited on glass substrate by thermal evaporation, and the films studied in the present work are polycrystalline with crystallites preferentially oriented along (002)-H direction. It is shown that swift heavy ion (SHI) irradiation leads to grain agglomeration and hence an increase in the grain size at low ion fluences. The observed lattice compaction was related to irradiation induced polygonization. The optical band gap energy decreased after irradiation, possibly due to the combined effect of change in the grain size and in the creation of intermediate energy levels. Enhanced nonradiative recombination via additional deep levels, introduced by SHI irradiation was noticed from photoluminescence (PL) analysis. A shift in the core levels associated with the change in Fermi level position was realized from XPS analysis. The chemistry of CdS film surface was studied which showed profound chemisorption of oxygen on the surface of CdS.</p>