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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Reuther, Helfried
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Publications (5/5 displayed)
- 2013Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shuntscitations
- 2012GaMnN epitaxial films with high magnetization
- 2011Reduced leakage current in BiFeO3 thin films with rectifying contactscitations
- 2008In-situ study of the preferential orientation of magnetron sputtered ni-ti thin films as a function of bias and substrate type
- 2008Study of graded Ni-Ti shape memory alloy film growth on Si(100) substratecitations
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article
Study of graded Ni-Ti shape memory alloy film growth on Si(100) substrate
Abstract
<p>In-situ X-ray diffraction (XRD) was employed to study the effect of the deliberate change of the Ti/Ni ratio during the deposition of Ni-Ti films. Thus, graded films were deposited exhibiting distinctive composition and crystalline structure along the growth direction. The as-sputtered films were ex-situ characterized by Auger electron spectroscopy (AES), cross-sectional transmission electron microscopy (XTEM), and electrical resistivity (ER) measurements (during thermal cycling). In this paper results are presented concerning a film (thickness of ≈∈420 nm) with a Ti-rich composition in the central part (ranging from 50 to ≈60 at.∈%) and near-equiatomic composition in the extremities, following four distinct deposition periods (different Ti target powers). During the initial deposition step (near-equiatomic composition) the Ni-Ti B2 phase starts by stacking onto (h00) planes on the naturally oxidized Si(100) substrate due to the presence of the native Si oxide (2-3 nm). The increase of the power of the Ti target in the second and third steps induced the precipitation of Ti<sub>2</sub>Ni. When stopping the Ti co-sputtering, Ti <sub>2</sub>Ni dissolves and, thus, plays the role of a Ti reservoir for the formation of B2 phase now preferentially stacking onto (110) with the system approaching again the equiatomic composition. The ex-situ study of the morphology of the interface has shown the presence of NiSi<sub>2</sub> silicides (A-NiSi<sub>2</sub> and B-NiSi<sub>2</sub>), Ti<sub>4</sub>Ni <sub>4</sub>Si<sub>7</sub>, Ti<sub>2</sub>Ni and a non-identified phase constituted by Ni, Ti and Si, most likely amorphous. During thermal cycling, ER measurements revealed phase transitions associated with the B2, R-phase and B19' phases. These type of studies allow the identification of intermediate states during deposition and annealing, and the correlation with the final structure of the film, being useful for the optimisation of the deposition parameters in order to fabricate films with a two-way reversible actuation.</p>