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Alexe, G.
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booksection
On the way to the II-VI quantum dot VCSEL
Abstract
Formation mechanisms of quantum (lots in the system CdSe/ZnSe are thoroughly analyzed in this paper. Defect free QDs are generated by segregation enhanced CdSe reorganisation and not by the Stranski-Krastanov growth mode. Stacking fault formation is enhanced in QD stacks and reduced by using strain compensating ZnSSe spacer layers. For a fivefold QD stack in a laser structure a T(0) value of about 1200K up to 100K was determined by threshold measurements. Electrically pumped lasing at room temperature was achieved above a threshold current density of 7.5 kA/cm(2). Degradation measurements prove a higher stability of QDs against high current injection as compared to quantum wells. High reflectivities of above 99 % for undoped and p-type doped distributed Bragg reflectors based on ZnSe and MgS/ZnSe superlattices have been obtained. Monolithic vertical resonators possess a quality factor of about 100.