| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bos, Jan-Willem Gezienes
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Alloying and doping control in the layered metal phosphide thermoelectric CaCuPcitations
- 2023Thermoelectric properties and Kondo transition in the pseudo-gap metals TiNiSi and TiNiGe
- 2023Alloying and doping control in the layered metal phosphide thermoelectric CaCuPcitations
- 2023Thermoelectric properties of the aliovalent half-Heusler alloy Zn0.5Ti0.5NiSb with intrinsic low thermal conductivitycitations
- 2019Suppression of thermal conductivity without impeding electron mobility in n-type XNiSn half-Heusler thermoelectricscitations
- 2019Phase stability and thermoelectric properties of TiCoSb-TiM2Sn (M = Ni, Fe) Heusler compositescitations
- 2018Grain-by-grain compositional variations and interstitial metals - a new route towards achieving high performance in Half-Heusler thermoelectricscitations
- 2018Substitution versus full-Heusler segregation in TiCoSbcitations
- 2016Thermoelectric properties and high-temperature stability of the Ti1-xVxCoSb1-xSnx half-Heusler alloyscitations
- 2015Efficient thermoelectric performance in silicon nano-films by vacancy-engineeringcitations
Places of action
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article
Thermoelectric properties and Kondo transition in the pseudo-gap metals TiNiSi and TiNiGe
Abstract
Materials with the TiNiSi structure have recently been highlighted as potential thermoelectric materials. Here we report the thermoelectric properties of TiNiX (X = Si and Ge). Both materials behave as defective metals or heavily doped degenerate semiconductors. Room temperature Seebeck coefficients are -45 μV K<sup>-1</sup> (Si) and -20 μV K<sup>-1</sup> (Ge) with electrical resistivities of 0.5-1 mΩ cm. The lattice thermal conductivities are 8 W m<sup>-1</sup> K<sup>-1</sup> (Si) and 6 W m-1 K-1 (Ge) at 360 K, which is promising in the absence of alloying. The calculated power factors and figures of merit remain small, with the largest S<sup>2</sup>/ρ = 0.17 mW m<sup>-1</sup> K<sup>-2</sup> and peak zT = 5 × 10<sup>-3</sup> seen in TiNiSi near 300 K. Both compositions show Kondo behaviour at low-temperatures, linked to the emergence of local moment magnetism, and have substantial magnetoresistance effects at 2 K. This work provides property characterisation for two members of this large class of intermetallic materials.