• Bos, Jan-Willem Gezienes
• Downie, Ruth A.
• Biswas, Rajan
• Kennedy, Blair
• Smith, Ronald

Abstract

Materials with the TiNiSi structure have recently been highlighted as potential thermoelectric materials. Here we report the thermoelectric properties of TiNiX (X = Si and Ge). Both materials behave as defective metals or heavily doped degenerate semiconductors. Room temperature Seebeck coefficients are -45 μV K^-1 (Si) and -20 μV K^-1 (Ge) with electrical resistivities of 0.5-1 mΩ cm. The lattice thermal conductivities are 8 W m^-1 K^-1 (Si) and 6 W m-1 K-1 (Ge) at 360 K, which is promising in the absence of alloying. The calculated power factors and figures of merit remain small, with the largest S²/ρ = 0.17 mW m^-1 K^-2 and peak zT = 5 × 10^-3 seen in TiNiSi near 300 K. Both compositions show Kondo behaviour at low-temperatures, linked to the emergence of local moment magnetism, and have substantial magnetoresistance effects at 2 K. This work provides property characterisation for two members of this large class of intermetallic materials.

Topics

• impedance spectroscopy
• semiconductor
• intermetallic