| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schwarz, Ulrich
Chemnitz University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022On the Fabrication and Characterization of Polymer-Based Waveguide Probes for Use in Future Optical Cochlear Implantscitations
- 2022Mechanische Eigenschaften von Schälfurnierlagen in Sperrhölzern
- 2016Superconductivity in Weyl semimetal candidate MoTe2citations
- 2014Ca3Pt4+xGe13−y and Yb3Pt4Ge13: new derivatives of the Pr3Rh4Sn13 structure typecitations
- 2011High-pressure synthesis of rare-earth metal disulfides and diselenides LnX2 (Ln = Sm, Gd, Tb, Dy, Ho, Er and Tm; X = S, Se)citations
- 2010Thermal, Magnetic, Electronic and Superconducting Properties of Rare-Earth Metal Pentagermanides REGe5 (RE = La, Nd, Sm, Gd) and Synthesis of TbGe5citations
- 2009Dynamic disorder of Bi82+ clusters in the plastic phase (Bi8)3Bi[InI4]9citations
- 2008The first silicon-based cationic clathrate III with high thermal stability: Si172-xPxTey (x=2y, y>20).citations
- 2006Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates
- 2006Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates
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article
Dynamic disorder of Bi82+ clusters in the plastic phase (Bi8)3Bi[InI4]9
Abstract
International audience ; Black, air-insensitive crystals of the bismuth-rich tetraiodido-indate(III) (Bi8)3Bi[InI4]9 have been prepared from melts of the contributing elements. X-ray diffraction on a single crystal at 293 K and 220 K revealed a cubic structure with [InI4] tetrahedra, isolated Bi3+ cations and rotationally disordered Bi82+ square antiprisms (space group Fm-3c; a = 20.162(2) Å at T = 293(1)). The principal arrangement of the complex ions corresponds to the AuCu3 type. The small bulk modulus B0 = 12(1) GPa and its large pressure derivative B0 = 11(1) as well as the low Debye temperature θD = 52 K are in accordance with a plastic behavior. Cooling below 148(1) K induces the first order transition into an ordered phase with 0.43 % higher density but much larger unit cell and lower crystallographic point group. The transition enthalpy ΔH ≈ 3.8 kJmol1 and transition entropy ΔS ≈ 3 R were determined from specific heat data. A similar reversible phase transition into a lower symmetric structure is observed at a pressure of approximately 5 GPa. (Bi8)3Bi[InI4]9 is a diamagnetic semiconductor.