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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Oliver, Rachel
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Topics
Publications (16/16 displayed)
- 2024Improved Sequentially Processed Cu(In,Ga)(S,Se)<sub>2</sub> by Ag Alloying
- 2024Room temperature quantum emitters in aluminum nitride epilayers on silicon
- 2023Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopycitations
- 2021Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films
- 2021Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance.
- 2019Thick adherent diamond films on AlN with low thermal barrier resistancecitations
- 2019Thick, adherent diamond films on AlN with low thermal barrier resistancecitations
- 2017Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structurecitations
- 2017Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structurecitations
- 2017Stable Speckle Patterns for Nano-scale Strain Mapping up to 700 °C
- 2017Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth
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article
Improved Sequentially Processed Cu(In,Ga)(S,Se)<sub>2</sub> by Ag Alloying
Abstract
<jats:p>Alloying small quantities of silver into Cu(In,Ga)Se<jats:sub>2</jats:sub> is shown to improve the efficiency for wide and low bandgap solar cells. Low bandgap industrial Cu(In,Ga)(S,Se)<jats:sub>2</jats:sub> absorbers are studied, substituting less than 10% of the copper with silver, using absolute photoluminescence and cathodoluminescence spectroscopy. Silver improves the grain size and promotes the interdiffusion of Ga and In across the depth of the absorber, resulting in a smoother bandgap gradient. However, a certain lateral inhomogeneity is observed near the front and back sides. The nonradiative losses in the bare absorbers are reduced by up to 30 meV.</jats:p>