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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Krause, Maximilian
Swiss Federal Laboratories for Materials Science and Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Precise Alkali Supply during and after Growth for High‐Performance Low Bandgap (Ag,Cu)InSe<sub>2</sub> Solar Cellscitations
- 2024Tensorial harmonic bases of arbitrary order with applications in elasticity, elastoviscoplasticity and texture-based modeling
- 2024Influence of Au, Pt, and C seed layers on lithium nucleation dynamics for anode-free solid-state batteriescitations
- 2023Silver-alloyed low-bandgap CuInSe 2 solar cells for tandem applicationscitations
- 2023Silver‐Alloyed Low‐Bandgap CuInSe<sub>2</sub> Solar Cells for Tandem Applicationscitations
- 2021Silver-promoted high-performance (Ag,Cu)(In,Ga)Se 2 thin-film solar cells grown at very low temperaturecitations
- 2021Silver-promoted high-performance (Ag,Cu)(In,Ga)Se2 thin-film solar cells grown at very low temperaturecitations
- 2020Phase-Specific Strain Hardening and Load Partitioning of Cold Rolled Duplex Stainless Steel X2CrNiN23-4
- 2020Maximum-Entropy Based Estimates of Stress and Strain in Thermoelastic Random Heterogeneous Materials
- 2019No Evidence for Passivation Effects of Na and K at Grain Boundaries in Polycrystalline Cu(In,Ga)Se<sub>2</sub> Thin Films for Solar Cellscitations
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article
Precise Alkali Supply during and after Growth for High‐Performance Low Bandgap (Ag,Cu)InSe<sub>2</sub> Solar Cells
Abstract
<jats:p>Alkali treatments are crucial for low bandgap (Ag,Cu)InSe<jats:sub>2</jats:sub> (ACIS) and Cu(In,Ga)Se<jats:sub>2</jats:sub>‐based solar cell performance. Traditionally, Ag‐alloying of CIS (ACIS) is grown on soda‐lime glass (SLG) at temperatures exceeding 500 °C, resulting in uncontrolled alkali diffusion from the substrate and variable photovoltaic properties. A substrate‐independent low‐bandgap ACIS growth process is introduced and the impact of controlled supplies of NaF and RbF alkali fluorides before and after absorber growth through precursor layers and post‐deposition treatments (PDT) are investigated. NaF and RbF precursor layers enhance carrier lifetimes and doping density, outperforming the previous SLG‐dependent strategy. Even small quantities of RbF significantly enhance device performance, while specific NaF amount during deposition are necessary to limit grain growth and achieve high doping densities and lifetimes. A certain density of grain boundaries appears crucial for high doping levels. Although subsequent NaF post‐deposition treatment (PDT) does not provide additional benefits with sufficient Na during growth, RbF‐PDT remains crucial. The best performance is achieved with a combination of NaF and RbF precursor layers along with RbF‐PDT, resulting in over 19% efficiency, 605 mV open‐circuit voltage (<jats:italic>V</jats:italic><jats:sub>OC</jats:sub>), 73% fill factor (FF), a carrier density of 3 × 10<jats:sup>16</jats:sup> cm<jats:sup>−3</jats:sup>, and a 700 ns lifetime. This approach supports high‐efficiency ACIS solar cell advancement, particularly for thin‐film tandem photovoltaic devices.</jats:p>