| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Carron, Romain
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2024Precise Alkali Supply during and after Growth for High‐Performance Low Bandgap (Ag,Cu)InSe<sub>2</sub> Solar Cellscitations
- 2024Comparison of SnO 2 and CdSe buffer layers for Sb 2 Se 3 thin film solar cells
- 2024Liâ€Doping and Agâ€Alloying Interplay Shows the Pathway for Kesterite Solar Cells with Efficiency Over 14%citations
- 2024Li-doping and Ag-alloying interplay shows the pathway for kesterite solar cells with efficiency over 14%citations
- 2024Li-doping and Ag-alloying interplay shows the pathway for kesterite solar cells with efficiency over 14%citations
- 2023Controlled li alloying by postsynthesis electrochemical treatment of Cu 2 ZnSn(S, Se) 4 absorbers for solar cellscitations
- 2023Silver-alloyed low-bandgap CuInSe 2 solar cells for tandem applicationscitations
- 2023Silver‐Alloyed Low‐Bandgap CuInSe<sub>2</sub> Solar Cells for Tandem Applicationscitations
- 2021Silver-promoted high-performance (Ag,Cu)(In,Ga)Se 2 thin-film solar cells grown at very low temperaturecitations
- 2021Silver-promoted high-performance (Ag,Cu)(In,Ga)Se2 thin-film solar cells grown at very low temperaturecitations
- 2021Physical passivation of grain boundaries and defects in perovskite solar cells by an isolating thin polymercitations
- 2020ALD-ZnMgO and absorber surface modifications to substitute CdS buffer layers in co-evaporated CIGSe solar cellscitations
- 2020ALD-ZnMgO and absorber surface modifications to substitute CdS buffer layers in co-evaporated CIGSe solar cellscitations
- 2020ALD-ZnMgO and absorber surface modifications to substitute CdS buffer layers in co-evaporated CIGSe solar cellscitations
- 2019Bandgap of thin film solar cell absorbers: a comparison of various determination methodscitations
- 2018Voids and compositional inhomogeneities in Cu(In,Ga)Se 2 thin films: evolution during growth and impact on solar cell performancecitations
- 2018Epitools, a software suite for presurgical brain mapping in epilepsy : Intracerebral EEGcitations
- 2018Single-graded CIGS with narrow bandgap for tandem solar cellscitations
- 2018Structural and electronic properties of CdTe 1-x Se x films and their application in solar cellscitations
- 2018Voids and compositional inhomogeneities in Cu(In,Ga)Se2 thin films: evolution during growth and impact on solar cell performancecitations
- 2016Band gap widening at random CIGS grain boundary detected by valence electron energy loss spectroscopycitations
- 2016Surface passivation for reliable measurement of bulk electronic properties of heterojunction devicescitations
Places of action
| Organizations | Location | People |
|---|
article
Silver‐Alloyed Low‐Bandgap CuInSe<sub>2</sub> Solar Cells for Tandem Applications
Abstract
<jats:sec><jats:label /><jats:p>Photovoltaic conversion efficiency of CuInSe<jats:sub>2</jats:sub> solar cells is limited by low fill factor (<jats:italic>FF</jats:italic>) and open‐circuit‐voltage (<jats:italic>V</jats:italic> <jats:sub>OC</jats:sub>) values compared to Si or perovskite solar cells. Herein, small quantities of Ag to alloy CuInSe<jats:sub>2</jats:sub> to improve its properties are used, such as enhanced grain growth, higher crystal quality, and less detrimental defects, to overcome the device limitations of low‐bandgap CuInSe<jats:sub>2</jats:sub> absorbers. The impact of Ag on the electronic properties of the bulk material and the buffer–absorber interface is examined at different stoichiometric compositions. Ag alloying improves the morphology with larger grain sizes, extends carrier lifetimes, and elevates net doping densities. Ag alloying reduces Cu‐depleted ordered‐vacancy compounds at the buffer–absorber interface and causes a chalcopyrite phase of high‐crystal‐quality independent of the I/III ratio. It is suggested Ag affects the formation of the alkali‐rich surface layer (Rb–In–Se). The best solar cell with an Ag‐alloyed CuInSe<jats:sub>2</jats:sub> absorber achieves a <jats:italic>V</jats:italic> <jats:sub>OC</jats:sub> over 600 mV and <jats:italic>FF</jats:italic> values of about 74%, which result in a power conversion efficiency of 18.7% for low‐bandgap energy of 1.0 eV with short‐circuit current above 42 mA cm<jats:sup>−2</jats:sup>. The advantage of Ag alloying on the device performance of CuInSe<jats:sub>2</jats:sub> solar cells will impact future applications in tandem devices.</jats:p></jats:sec>