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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Phang, Sieu Pheng
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Electron contact interlayers for low‐temperature‐processed crystalline silicon solar cellscitations
- 2022Gettering in silicon photovoltaicscitations
- 2021Investigation of Gallium-Boron Spin-On Codoping for poly-Si/SiOx Passivating Contactscitations
- 201922.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n-type Solar-Grade Waferscitations
- 2018Effective impurity gettering by phosphorus- and boron-diffused polysilicon passivating contacts for silicon solar cellscitations
- 2018Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cellscitations
- 2015Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline siliconcitations
- 2014External and internal gettering of interstitial iron in silicon for solar cellscitations
- 2014The impact of SiO2/SiNrm x stack thickness on laser doping of silicon solar cellcitations
- 2013Secondary electron microscopy dopant contrast image (SEMDCI) for laser dopingcitations
- 2012Investigating internal gettering of iron at grain boundaries in multicrystalline silicon via photoluminescence imagingcitations
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article
Investigation of Gallium-Boron Spin-On Codoping for poly-Si/SiOx Passivating Contacts
Abstract
<p>A doping technique for p-type poly-Si/SiOx passivating contacts using a spin-on method for different mixtures of Ga and B glass solutions is presented. Effects of solution mixing ratios on the contact performance (implied open circuit voltage iV<sub>oc</sub>, contact resistivity ρ<sub>c</sub>) are investigated. For all as-annealed samples at different drive-in temperatures, increasing the percentage of Ga in the solution shows a decrement in iV<sub>oc</sub> (from ∼680 to ∼610 mV) and increment in ρ<sub>c</sub> (from ∼3 to ∼800 mΩ cm<sup>2</sup>). After a hydrogenation treatment by depositing a SiN<sub>x</sub>/AlO<sub>x</sub> stack followed by forming gas annealing, all samples show improved iVoc (∼700 mV with Ga-B co-doped, and ∼720 mV with all Ga). Interestingly, when co-doping Ga with B, even a small amount of B in the mixing solution shows negative effects on the surface passivation. Active and total dopant profiles obtained by electrical capacitance voltage and secondary-ion mass spectrometry measurements, respectively, reveal a relatively low percentage of electrically-active Ga and B in the poly-Si and Si layers. These results help understand the different features of the two dopants: a low ρ<sub>c</sub> with B, a good passivation with Ga, their degree of activation inside the poly-Si and Si layers, and the annealing effects.</p>