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Truong, Thien N.
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article
Investigation of Gallium-Boron Spin-On Codoping for poly-Si/SiOx Passivating Contacts
Abstract
<p>A doping technique for p-type poly-Si/SiOx passivating contacts using a spin-on method for different mixtures of Ga and B glass solutions is presented. Effects of solution mixing ratios on the contact performance (implied open circuit voltage iV<sub>oc</sub>, contact resistivity ρ<sub>c</sub>) are investigated. For all as-annealed samples at different drive-in temperatures, increasing the percentage of Ga in the solution shows a decrement in iV<sub>oc</sub> (from ∼680 to ∼610 mV) and increment in ρ<sub>c</sub> (from ∼3 to ∼800 mΩ cm<sup>2</sup>). After a hydrogenation treatment by depositing a SiN<sub>x</sub>/AlO<sub>x</sub> stack followed by forming gas annealing, all samples show improved iVoc (∼700 mV with Ga-B co-doped, and ∼720 mV with all Ga). Interestingly, when co-doping Ga with B, even a small amount of B in the mixing solution shows negative effects on the surface passivation. Active and total dopant profiles obtained by electrical capacitance voltage and secondary-ion mass spectrometry measurements, respectively, reveal a relatively low percentage of electrically-active Ga and B in the poly-Si and Si layers. These results help understand the different features of the two dopants: a low ρ<sub>c</sub> with B, a good passivation with Ga, their degree of activation inside the poly-Si and Si layers, and the annealing effects.</p>