| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Siebentritt, Susanne
University of Luxembourg
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying
- 2024Composition dependence of electronic defects in CuGaS2citations
- 2024Improved Sequentially Processed Cu(In,Ga)(S,Se)<sub>2</sub> by Ag Alloying
- 2023Chalcopyrite solar cells —state-of-the-art and options for improvementcitations
- 2023On the Origin of Tail States and Open Circuit Voltage Losses in Cu(In,Ga)Se2citations
- 2023Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb<sub>2</sub>Se<sub>3</sub>/CdS stacks for reduced interface recombination and increased open‐circuit voltagescitations
- 2023CuIn(Se,Te)2 absorbers with bandgaps <1 eV for bottom cells in tandem applications
- 2022Low temperature (Zn,Sn)O deposition for reducing interface open-circuit voltage deficit to achieve highly efficient Se-free Cu(In,Ga)S2 solar cellscitations
- 2022How much gallium do we need for a p-type Cu(In,Ga)Se<sub>2</sub>?citations
- 2021Passivating Surface Defects and Reducing Interface Recombination in CuInS<sub>2</sub> Solar Cells by a Facile Solution Treatmentcitations
- 2021The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cellscitations
- 2020Oxidation as Key Mechanism for Efficient Interface Passivation in Cu (In,Ga)Se2 Thin-Film Solar Cells
- 2020Ultra-thin passivation layers in Cu(In,Ga)Se2 thin-film solar cells: full-area passivated front contacts and their impact on bulk doping
- 2016Cu–Zn disorder and band gap fluctuations in Cu2ZnSn(S,Se)4 : Theoretical and experimental investigationscitations
- 2015Epitaxial Cu2ZnSnSe4 thin films and devicescitations
- 2014Single second laser annealed CuInSe2 semiconductors from electrodeposited precursors as absorber layers for solar cellscitations
- 2012Thin film solar cells based on the ternary compound Cu2SnS3citations
- 2008Photoluminescence and Raman spectra of the ordered vacancy compound CuGa5Se8citations
Places of action
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article
Passivating Surface Defects and Reducing Interface Recombination in CuInS<sub>2</sub> Solar Cells by a Facile Solution Treatment
Abstract
<jats:sec><jats:label /><jats:p>Interface recombination at the absorber surface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or quasi‐Fermi‐level splitting (qFLs) measures the quality of the absorber. Interface recombination reduces the open‐circuit voltage (<jats:italic>V</jats:italic><jats:sub>OC</jats:sub>) with respect to the qFLs. A facile solution‐based sulfur postdeposition treatment (S‐PDT) is explored to passivate the interface of CuInS<jats:sub>2</jats:sub> grown under Cu‐rich conditions, which show excellent qFLs values, but much lower <jats:italic>V</jats:italic><jats:sub>OC</jats:sub>s. The absorbers are treated in S‐containing solutions at 80 °C. Absolute calibrated photoluminescence and current–voltage measurements demonstrate a reduction of the deficit between qFLs and <jats:italic>V</jats:italic><jats:sub>OC</jats:sub> by almost one‐third compared with the untreated device. Temperature dependence of the open‐circuit voltage shows increased activation energy for the dominant recombination path, indicating less interface recombination. In addition, capacitance transients reveal the presence of slow metastable defects in the untreated solar cell. The slow response is considerably reduced by the S‐PDT, suggesting passivation of these slow metastable defects. The results demonstrate the effectiveness of solution‐based S‐treatment in passivating defects, presenting a promising strategy to explore and reduce defect states near the interface of chalcogenide semiconductors.</jats:p></jats:sec>