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Chen, Wei Chao
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article
High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells
Abstract
<p>Herein, it is demonstrated, by using industrial techniques, that a passivation layer with nanocontacts based on silicon oxide (SiO<sub>x</sub>) leads to significant improvements in the optoelectronical performance of ultrathin Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells. Two approaches are applied for contact patterning of the passivation layer: point contacts and line contacts. For two CIGS growth conditions, 550 and 500 °C, the SiO<sub>x</sub> passivation layer demonstrates positive passivation properties, which are supported by electrical simulations. Such positive effects lead to an increase in the light to power conversion efficiency value of 2.6% (absolute value) for passivated devices compared with a nonpassivated reference device. Strikingly, both passivation architectures present similar efficiency values. However, there is a trade-off between passivation effect and charge extraction, as demonstrated by the trade-off between open-circuit voltage (V<sub>oc</sub>) and short-circuit current density (J<sub>sc</sub>) compared with fill factor (FF). For the first time, a fully industrial upscalable process combining SiO<sub>x</sub> as rear passivation layer deposited by chemical vapor deposition, with photolithography for line contacts, yields promising results toward high-performance and low-cost ultrathin CIGS solar cells with champion devices reaching efficiency values of 12%, demonstrating the potential of SiO<sub>x</sub> as a passivation material for energy conversion devices.</p>