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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Edoff, Marika
Uppsala University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024High-concentration silver alloying and steep back-contact gallium grading enabling copper indium gallium selenide solar cell with 23.6% efficiencycitations
- 2023Silver Alloying in Highly Efficient CuGaSe 2 Solar Cells with Different Buffer Layerscitations
- 2023Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technologycitations
- 2023Low energy muon study of the p-n interface in chalcopyrite solar cells
- 2023Silver Alloying in Highly Efficient CuGaSe2 Solar Cells with Different Buffer Layerscitations
- 2021Thermodynamic stability, phase separation and Ag grading in (Ag,Cu)(In,Ga)Se2 solar absorberscitations
- 2021Alkali Dispersion in (Ag,Cu)(In,Ga)Se-2 Thin Film Solar Cells-Insight from Theory and Experimentcitations
- 2021Alkali dispersion in (Ag,Cu)(In,Ga)Se2 thin film solar cells – Insight from theory and experimentcitations
- 2021High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cellscitations
- 2020Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cellscitations
- 2020Thermodynamic stability, phase separation and Ag grading in (Ag,Cu)(In,Ga)Se-2 solar absorberscitations
- 2020Comparison of Sulfur Incorporation into CuInSe(2)and CuGaSe(2)Thin-Film Solar Absorberscitations
- 2019Rear Optical Reflection and Passivation Using a Nanopatterned Metal/Dielectric Structure in Thin-Film Solar Cellscitations
- 2019Atomic layer deposition of amorphous tin-gallium oxide filmscitations
- 2019Modelling Supported Design of Light Management Structures in Ultra-Thin Cigs Photovoltaic Devicescitations
- 2018Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layercitations
- 2018Insulator Materials for Interface Passivation of Cu(In,Ga)Se-2 Thin Filmscitations
- 2017CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
- 2017Cd and Cu Interdiffusion in Cu(In, Ga)Se2/CdS Hetero-Interfaces
- 2017ALD of phase controlled tin monosulfide thin films
- 2015Investigating the electronic properties of Al2O3/Cu(In, Ga)Se-2 interfacecitations
- 2014Potential-induced optimization of ultra-thin rear surface passivated CIGS solar cellscitations
- 2014Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect modelscitations
- 2013Development of Rear Surface Passivated Cu(In,Ga)Se2 Thin Film Solar Cells with Nano-Sized Local Rear Point Contactscitations
- 2013Surface engineering in Cu(In,Ga)Se2 solar cellscitations
- 2011Effect of gallium grading in Cu(In,Ga)Se2 solar-cell absorbers produced by multi-stage coevaporationcitations
Places of action
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article
High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells
Abstract
<p>Herein, it is demonstrated, by using industrial techniques, that a passivation layer with nanocontacts based on silicon oxide (SiO<sub>x</sub>) leads to significant improvements in the optoelectronical performance of ultrathin Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells. Two approaches are applied for contact patterning of the passivation layer: point contacts and line contacts. For two CIGS growth conditions, 550 and 500 °C, the SiO<sub>x</sub> passivation layer demonstrates positive passivation properties, which are supported by electrical simulations. Such positive effects lead to an increase in the light to power conversion efficiency value of 2.6% (absolute value) for passivated devices compared with a nonpassivated reference device. Strikingly, both passivation architectures present similar efficiency values. However, there is a trade-off between passivation effect and charge extraction, as demonstrated by the trade-off between open-circuit voltage (V<sub>oc</sub>) and short-circuit current density (J<sub>sc</sub>) compared with fill factor (FF). For the first time, a fully industrial upscalable process combining SiO<sub>x</sub> as rear passivation layer deposited by chemical vapor deposition, with photolithography for line contacts, yields promising results toward high-performance and low-cost ultrathin CIGS solar cells with champion devices reaching efficiency values of 12%, demonstrating the potential of SiO<sub>x</sub> as a passivation material for energy conversion devices.</p>