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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tebyetekerwa, Mike
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Publications (4/4 displayed)
- 2024Recent advances in MXene/elastomer nanocomposites: Synthesis, properties and applicationscitations
- 2021Complementary bulk and surface passivations for highly efficient perovskite solar cells by gas quenchingcitations
- 2021Investigation of Gallium-Boron Spin-On Codoping for poly-Si/SiOx Passivating Contactscitations
- 2020Hydrogenation Mechanisms of Poly-Si/SiOx Passivating Contacts by Different Capping Layerscitations
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article
Hydrogenation Mechanisms of Poly-Si/SiOx Passivating Contacts by Different Capping Layers
Abstract
<p>Herein, posttreatment techniques of phosphorus-doped poly-Si/SiO<sub><i>x</i></sub> passivating contacts, including forming gas annealing (FGA), atomic layer deposition (ALD) of hydrogenated aluminum oxide (AlO<sub><i>x</i></sub>:H), and plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated silicon nitride (SiN<sub><i>x</i></sub>:H),are investigated and compared in terms of their application to siliconsolar cells. A simple FGA posttreatment produces a significant increasein the implied open circuit voltage (iV<sub>oc</sub>) and the effective minority-carrier lifetime (<i>τ</i><sub>eff</sub>)of high-resistivity crystalline Si (c-Si) samples, whereaslow-resistivity samples show a minimal change. Treatment by means of AlO<sub><i>x</i></sub>:H and/or SiN<sub><i>x</i></sub>:H followed by postdeposition FGA results in a universal increase in <i>τ</i><sub>eff</sub> and iV<sub>oc</sub>for all substrate resistivities (as high as 12.5 ms and 728 mV for100 Ω cm and 5.4 ms and 727 mV for 2 Ω cm n-type c-Si substrates). Inaddition, both the FGA and AlO<sub><i>x</i></sub>:H + FGA techniques can inject sufficient hydrogen into the samples to passivate defects at the SiO<sub><i>x</i></sub>/c-Si and poly-Si/SiO<sub><i>x</i></sub>interfaces. However, this hydrogen concentration is insufficient toneutralize both the nonradiative defects inside the poly-Si films anddangling bonds associated with the amorphous Si phase present in them.The hydrogen injected by the SiN<sub><i>x</i></sub>:H + FGA techniquecan passivate both the interfaces and the defects and dangling bondswithin the poly-Si film. These results are confirmed by low-temperaturephotoluminescence spectroscopy, Fourier transform infrared spectroscopy,and dynamic secondary-ion mass spectrometry measurements.</p>