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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Krause, Maximilian
Swiss Federal Laboratories for Materials Science and Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Precise Alkali Supply during and after Growth for High‐Performance Low Bandgap (Ag,Cu)InSe<sub>2</sub> Solar Cellscitations
- 2024Tensorial harmonic bases of arbitrary order with applications in elasticity, elastoviscoplasticity and texture-based modeling
- 2024Influence of Au, Pt, and C seed layers on lithium nucleation dynamics for anode-free solid-state batteriescitations
- 2023Silver-alloyed low-bandgap CuInSe 2 solar cells for tandem applicationscitations
- 2023Silver‐Alloyed Low‐Bandgap CuInSe<sub>2</sub> Solar Cells for Tandem Applicationscitations
- 2021Silver-promoted high-performance (Ag,Cu)(In,Ga)Se 2 thin-film solar cells grown at very low temperaturecitations
- 2021Silver-promoted high-performance (Ag,Cu)(In,Ga)Se2 thin-film solar cells grown at very low temperaturecitations
- 2020Phase-Specific Strain Hardening and Load Partitioning of Cold Rolled Duplex Stainless Steel X2CrNiN23-4
- 2020Maximum-Entropy Based Estimates of Stress and Strain in Thermoelastic Random Heterogeneous Materials
- 2019No Evidence for Passivation Effects of Na and K at Grain Boundaries in Polycrystalline Cu(In,Ga)Se<sub>2</sub> Thin Films for Solar Cellscitations
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article
No Evidence for Passivation Effects of Na and K at Grain Boundaries in Polycrystalline Cu(In,Ga)Se<sub>2</sub> Thin Films for Solar Cells
Abstract
<jats:sec><jats:label /><jats:p>Thin‐film solar cells based on Cu(In,Ga)Se<jats:sub>2</jats:sub> (CIGSe) absorber layers reach conversion efficiencies of above 20%. One key to this success is the incorporation of alkali metals, such as Na and K, into the surface and the volume of the CIGSe thin film. The present work discusses the impact of Na and K on the grain‐boundary (GB) properties in CIGSe thin films, i.e., on the barriers for charge carriers, Φ<jats:sub>b</jats:sub>, and on the recombination velocities at the GBs, <jats:italic>s</jats:italic><jats:sub>GB</jats:sub>. First, the physics connected with these two quantities as well as their impact on the device performance are revised, and then the values for the barrier heights and recombination velocities are provided from the literature. The <jats:italic>s</jats:italic><jats:sub>GB</jats:sub> values are measured by means of a cathodoluminescence analysis of Na‐/K‐free CIGSe layers as well as on CIGSe layers on Mo/sapphire substrates, which are submitted to only NaF or only KF postdeposition treatments. Overall, passivating effects on GBs by neither Na nor K can be confirmed. The GB recombination velocities seem to remain on the same order of magnitude, in average about 10<jats:sup>3</jats:sup>–10<jats:sup>4</jats:sup> cm s<jats:sup>−1</jats:sup>, irrespective of whether CIGSe thin films are Na‐/K‐free or Na‐/K‐containing.</jats:p></jats:sec>