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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Borme, Jérôme
International Iberian Nanotechnology Laboratory
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2023Room-temperature electroluminescence and light detection from III-V unipolar microLEDs without p-type dopingcitations
- 2021High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cellscitations
- 2021Efficient reSe2 photodetectors with CVD single-crystal graphene contactscitations
- 2020Clean-Room lithographical processes for the fabrication of Graphene biosensorscitations
- 2018Optical Lithography Patterning of SiO<sub>2</sub> Layers for Interface Passivation of Thin Film Solar Cellscitations
Places of action
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article
Optical Lithography Patterning of SiO<sub>2</sub> Layers for Interface Passivation of Thin Film Solar Cells
Abstract
<jats:sec><jats:label /><jats:p>Ultrathin Cu(In,Ga)Se<jats:sub>2</jats:sub> solar cells are a promising way to reduce costs and to increase the electrical performance of thin film solar cells. An optical lithography process that can produce sub‐micrometer contacts in a SiO<jats:sub>2</jats:sub> passivation layer at the CIGS rear contact is developed in this work. Furthermore, an optimization of the patterning dimensions reveals constrains over the features sizes. High passivation areas of the rear contact are needed to passivate the CIGS interface so that high performing solar cells can be obtained. However, these dimensions should not be achieved by using long distances between the contacts as they lead to poor electrical performance due to poor carrier extraction. This study expands the choice of passivation materials already known for ultrathin solar cells and its fabrication techniques.</jats:p></jats:sec>