| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Fernandes, P. A.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2023Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporationcitations
- 2023Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technologycitations
- 2023Low energy muon study of the p-n interface in chalcopyrite solar cells
- 2021Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3: Culprits and benefitscitations
- 2018Optical Lithography Patterning of SiO<sub>2</sub> Layers for Interface Passivation of Thin Film Solar Cellscitations
- 2018Insulator Materials for Interface Passivation of Cu(In,Ga)Se-2 Thin Filmscitations
- 2018Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors
- 2014Annealing of RF-magnetron sputtered SnS2 precursors as a new route for single phase SnS thin filmscitations
- 2013Cu2ZnSnS4 absorber layers obtained through sulphurization of metallic precursors: Graphite box versus sulphur fluxcitations
- 2011Study of polycrystalline Cu2ZnSnS4 films by Raman scatteringcitations
- 2011Study of optical and structural properties of Cu2ZnSnS4 thin filmscitations
- 2010A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursorscitations
- 2010A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursorscitations
- 2010Influence of selenization pressure on the growth of Cu2ZnSnSe4 films from stacked metallic layerscitations
- 2009Precursors’ order effect on the properties of sulfurized Cu2ZnSnS4 thin filmscitations
Places of action
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article
Optical Lithography Patterning of SiO<sub>2</sub> Layers for Interface Passivation of Thin Film Solar Cells
Abstract
<jats:sec><jats:label /><jats:p>Ultrathin Cu(In,Ga)Se<jats:sub>2</jats:sub> solar cells are a promising way to reduce costs and to increase the electrical performance of thin film solar cells. An optical lithography process that can produce sub‐micrometer contacts in a SiO<jats:sub>2</jats:sub> passivation layer at the CIGS rear contact is developed in this work. Furthermore, an optimization of the patterning dimensions reveals constrains over the features sizes. High passivation areas of the rear contact are needed to passivate the CIGS interface so that high performing solar cells can be obtained. However, these dimensions should not be achieved by using long distances between the contacts as they lead to poor electrical performance due to poor carrier extraction. This study expands the choice of passivation materials already known for ultrathin solar cells and its fabrication techniques.</jats:p></jats:sec>