• Bose, Sourav
• Salomé, Pedro
• Lopes, Tomás S.
• Barbosa, João R. S.
• Silva, Ricardo
• Cunha, José Miguel
• Borme, Jérôme
• Fernandes, P. A.
• Wild, Jessica De
• Vermang, Bart
• Suresh, Sunil

Abstract

<jats:sec><jats:label /><jats:p>Ultrathin Cu(In,Ga)Se<jats:sub>2</jats:sub> solar cells are a promising way to reduce costs and to increase the electrical performance of thin film solar cells. An optical lithography process that can produce sub‐micrometer contacts in a SiO<jats:sub>2</jats:sub> passivation layer at the CIGS rear contact is developed in this work. Furthermore, an optimization of the patterning dimensions reveals constrains over the features sizes. High passivation areas of the rear contact are needed to passivate the CIGS interface so that high performing solar cells can be obtained. However, these dimensions should not be achieved by using long distances between the contacts as they lead to poor electrical performance due to poor carrier extraction. This study expands the choice of passivation materials already known for ultrathin solar cells and its fabrication techniques.</jats:p></jats:sec>

Topics

• impedance spectroscopy
• thin film
• extraction
• size-exclusion chromatography
• lithography