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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Ali, M. A. |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Mews, Mathias
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Publications (4/4 displayed)
- 2021Interface Molecular engineering for laminated monolithic perovskite/silicon tandem solar cells with 80.4% fill factorcitations
- 2018Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaicscitations
- 2017Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells
- 2016Interfaces in amorphous/crystalline silicon heterojunction solar cells ; Grenzflächen in amorph/kristallinen Siliziumheterosolarzellen
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article
Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics
Abstract
Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient hole‐selective front contact stack for crystalline silicon solar cells. However, hole extraction from the Si wafer and transport through this stack degrades upon annealing at 190 °C, which is needed to cure the screen‐printed Ag metallization applied to typical Si solar cells. Here, we show that effusion of hydrogen from the adjacent layers is a likely cause for this degradation, highlighting the need for hydrogen‐lean passivation layers when using such metal‐oxide‐based carrier‐selective contacts. Pre‐MoOX‐deposition annealing of the passivating a‐Si:H layer is shown to be a straightforward approach to manufacturing MoOX‐based devices with high fill factors using screen‐printed metallization cured at 190 °C.