| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Spirito, Davide
Basque Center for Materials, Applications and Nanostructures
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxycitations
- 2024The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdiskscitations
- 2024Full Picture of Lattice Deformation in a Ge 1-x Sn x Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
- 2023Terahertz subwavelength sensing with bio-functionalized germanium fano-resonators
- 2023The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> Microdiskscitations
- 2023Lateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication
- 2022Terahertz subwavelength sensing with bio-functionalized germanium fano-resonatorscitations
- 2022Magnetic properties of layered hybrid organic-Inorganic metal-halide perovskites: Transition metal, organic cation and perovskite phase pffectscitations
- 2022Lateral Selective SiGe Growth for Dislocation-Free Virtual Substrate Fabricationcitations
- 2022Raman spectroscopy in layered hybrid organic-inorganic metal halide perovskites
- 2022Magnetic Properties of Layered Hybrid Organic‐Inorganic Metal‐Halide Perovskites: Transition Metal, Organic Cation and Perovskite Phase Effectscitations
- 2022Monolithic and catalyst-free selective epitaxy of InP nanowires on Silicon
- 2022Tailoring photoluminescence by strain-engineering in layered perovskite flakescitations
- 2020CsPbX3/SiOx (X = Cl, Br, I) monoliths prepared via a novel sol-gel route starting from Cs4PbX6 nanocrystalscitations
- 2020Nanocrystals of Lead Chalcohalides:A Series of Kinetically Trapped Metastable Nanostructurescitations
- 2020Nano- and microscale apertures in metal films fabricated by colloidal lithography with perovskite nanocrystalscitations
- 2020Nanocrystals of Lead Chalcohalidescitations
- 2019Extending the Colloidal Transition Metal Dichalcogenide Library to ReS2 Nanosheets for Application in Gas Sensing and Electrocatalysiscitations
- 2019Keratin-Graphene Nanocomposite: Transformation of Waste Wool in Electronic Devicescitations
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article
Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopy
Abstract
<jats:title>Abstract</jats:title><jats:p>Lattice strain in crystals can be exploited to effectively tune their physical properties. In microscopic structures, experimental access to the full strain tensor with spatial resolution at the (sub‐)micrometer scale is at the same time very interesting and challenging. In this work, how scanning X‐ray diffraction microscopy, an emerging model‐free method based on synchrotron radiation, can shed light on the complex, anisotropic deformation landscape within three dimensional (3D) microstructures is shown. This technique allows the reconstruction of all lattice parameters within any type of crystal with submicron spatial resolution and requires no sample preparation. Consequently, the local state of deformation can be fully quantified. Exploiting this capability, all components of the strain tensor in a suspended, strained Ge<jats:sub>1 − x</jats:sub>Sn<jats:sub>x</jats:sub> /Ge microdisk are mapped. Subtle elastic deformations are unambiguously correlated with structural defects, 3D microstructure geometry, and chemical variations, as verified by comparison with complementary electron microscopy and finite element simulations. The methodology described here is applicable to a wide range of fields, from bioengineering to metallurgy and semiconductor research. </jats:p>