| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Richter, Carsten
Leibniz Institute for Crystal Growth
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdiskscitations
- 2024Full Picture of Lattice Deformation in a Ge 1-x Sn x Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
- 2023In situ compression of micropillars under coherent X-ray diffraction: a case study of experimental and data-analysis constraintscitations
- 2023Dislocation climb in AlN crystals grown at low-temperature gradients revealed by 3D X-ray diffraction imagingcitations
- 2023The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> Microdiskscitations
- 2022Monolithic and catalyst-free selective epitaxy of InP nanowires on Silicon
- 2021Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxycitations
- 2020Electrically driven transient and permanent phase transformations in highly strained epitaxial BiFeO3 thin filmscitations
- 2019LiTaO 3 defect structures by means of forbidden reflections
- 2019Ferroelectric Self-Poling in GeTe Films and Crystals
- 2017Strontium titanate: From symmetry changes to functionalitycitations
- 2016Analysis of modulated $Ho_{2}PdSi_{3}$ crystal structure at Pd K and Ho L absorption edges using resonant elastic X-scatteringcitations
- 2015Dielectric to pyroelectric phase transition induced by defect migrationcitations
- 2014Surface-near modifications of $mathrm{SrTiO_3}$ local symmetry due to nitrogen implantation investigated by grazing incidence XANEScitations
- 2010Stabilität von $mathrm{Mo/B_4C}$-Multilagenspiegeln für Synchrotronstrahlung und resonante Röntgenstreuung an defekt- und kristallfeldinduzierten Elektronendichteanisotropien in Rutil und $mathrm{BaTiO_{3}}$
Places of action
| Organizations | Location | People |
|---|
article
Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopy
Abstract
<jats:title>Abstract</jats:title><jats:p>Lattice strain in crystals can be exploited to effectively tune their physical properties. In microscopic structures, experimental access to the full strain tensor with spatial resolution at the (sub‐)micrometer scale is at the same time very interesting and challenging. In this work, how scanning X‐ray diffraction microscopy, an emerging model‐free method based on synchrotron radiation, can shed light on the complex, anisotropic deformation landscape within three dimensional (3D) microstructures is shown. This technique allows the reconstruction of all lattice parameters within any type of crystal with submicron spatial resolution and requires no sample preparation. Consequently, the local state of deformation can be fully quantified. Exploiting this capability, all components of the strain tensor in a suspended, strained Ge<jats:sub>1 − x</jats:sub>Sn<jats:sub>x</jats:sub> /Ge microdisk are mapped. Subtle elastic deformations are unambiguously correlated with structural defects, 3D microstructure geometry, and chemical variations, as verified by comparison with complementary electron microscopy and finite element simulations. The methodology described here is applicable to a wide range of fields, from bioengineering to metallurgy and semiconductor research. </jats:p>