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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tekelenburg, Eelco K.
University of Groningen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Cation Influence on Hot-Carrier Relaxation in Tin Triiodide Perovskite Thin Filmscitations
- 2024Quasi-2D Lead–Tin Perovskite Memory Devices Fabricated by Blade Coatingcitations
- 2024Mechanism of Hot-Carrier Photoluminescence in Sn-Based Perovskitescitations
- 2024Metal-Solvent Complex Formation at the Surface of InP Colloidal Quantum Dotscitations
- 2023The Origin of Broad Emission in ⟨100⟩ Two-Dimensional Perovskites: Extrinsic vs Intrinsic Processes.
- 2023The Origin of Broad Emission in ⟨100⟩ Two-Dimensional Perovskites: Extrinsic vs Intrinsic Processes.
- 2023Unraveling the Broadband Emission in Mixed Tin-Lead Layered Perovskitescitations
- 2023Unraveling the Broadband Emission in Mixed Tin-Lead Layered Perovskitescitations
- 2023Impact of two diammonium cations on the structure and photophysics of layered Sn-based perovskitescitations
- 2022The Origin of Broad Emission in ⟨100⟩ Two-Dimensional Perovskites: Extrinsic vs Intrinsic Processes.
- 2022The Origin of Broad Emission in ⟨100⟩ Two-Dimensional Perovskites: Extrinsic vs Intrinsic Processescitations
- 2022The Origin of Broad Emission in ⟨100»Two-Dimensional Perovskites:Extrinsic vs Intrinsic Processescitations
- 2022The Origin of Broad Emission in â ¨100»Two-Dimensional Perovskites: Extrinsic vs Intrinsic Processes
- 2020Extrinsic nature of the broad photoluminescence in lead iodide-based Ruddlesden-Popper perovskitescitations
Places of action
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article
Quasi-2D Lead–Tin Perovskite Memory Devices Fabricated by Blade Coating
Abstract
<p>Two terminal passive devices are regarded as one of the promising candidates to solve the processor-memory bottleneck in the Von Neumann computing architectures. Many different materials are used to fabricate memory devices, which have the potential to act as synapses in future neuromorphic electronics. Metal halide perovskites are attractive for memory devices as they display high density of defects with a low migration barrier. However, to become promising for a future neuromorphic technology, attention should be paid on non-toxic materials and scalable deposition processes. Herein, it is reported for the first time the successful fabrication of resistive memory devices using quasi-2D tin–lead perovskite of composition (BA)<sub>2</sub>MA<sub>4</sub>(Pb<sub>0.5</sub>Sn<sub>0.5</sub>)<sub>5</sub>I<sub>16</sub> by blade coating. The devices show typical memory characteristics with excellent endurance (2000 cycles), retention (10<sup>5</sup> s), and storage stability (3 months). Importantly, the memory devices successfully emulate synaptic behaviors such as spike-timing-dependent plasticity, paired-pulse facilitation, short-term potentiation, and long-term potentiation. A mix of slow (ionic) transport and fast (electronic) transport (charge trapping and de-trapping) is proven to be responsible for the observed resistive switching behavior.</p>